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74AHCT132D-Q100 PDF预览

74AHCT132D-Q100

更新时间: 2024-11-21 00:58:27
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
18页 744K
描述
Quad 2-input NAND Schmitt trigger

74AHCT132D-Q100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:3.90 MM, PLASTIC, MS-012, SOT108-1, SOP-14Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.63
系列:AHCT/VHCT/VTJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:8.65 mm
逻辑集成电路类型:NAND GATE湿度敏感等级:1
功能数量:4输入次数:2
端子数量:14最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
传播延迟(tpd):10 ns筛选级别:AEC-Q100
座面最大高度:1.75 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

74AHCT132D-Q100 数据手册

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74AHC132-Q100; 74AHCT132-Q100  
Quad 2-input NAND Schmitt trigger  
Rev. 1 — 8 November 2013  
Product data sheet  
1. General description  
The 74AHC132-Q100; 74AHCT132-Q100 is a high-speed Si-gate CMOS device and is  
pin compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with  
JEDEC standard No. 7-A.  
The 74AHC132-Q100; 74AHCT132-Q100 contains four 2-input NAND gates which accept  
standard input signals. They can transform slowly changing input signals into sharply  
defined, jitter free output signals. The gate switches at different points for positive-going  
and negative-going signals. The difference between the positive voltage VT+ and the  
negative VTis defined as the hysteresis voltage VH.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Balanced propagation delays  
Inputs accept voltages higher than VCC  
Input levels:  
For 74AHC132-Q100: CMOS level  
For 74AHCT132-Q100: TTL level  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM EIA/JESD22-A115-A exceeds 200 V  
Multiple package options  

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