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74AHC1G00GW-Q100,125 PDF预览

74AHC1G00GW-Q100,125

更新时间: 2024-11-27 03:04:43
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
12页 96K
描述
NAND Gate, AHC/VHC/H/U/V Series, 1-Func, 2-Input, CMOS, PDSO5

74AHC1G00GW-Q100,125 数据手册

 浏览型号74AHC1G00GW-Q100,125的Datasheet PDF文件第2页浏览型号74AHC1G00GW-Q100,125的Datasheet PDF文件第3页浏览型号74AHC1G00GW-Q100,125的Datasheet PDF文件第4页浏览型号74AHC1G00GW-Q100,125的Datasheet PDF文件第5页浏览型号74AHC1G00GW-Q100,125的Datasheet PDF文件第6页浏览型号74AHC1G00GW-Q100,125的Datasheet PDF文件第7页 
74AHC1G00-Q100;  
74AHCT1G00-Q100  
2-input NAND gate  
Rev. 1 — 16 September 2013  
Product data sheet  
1. General description  
74AHC1G00-Q100 and 74AHCT1G00-Q100 are high-speed Si-gate CMOS devices.  
They provide a 2-input NAND function.  
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.  
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Symmetrical output impedance  
High noise immunity  
Low power dissipation  
Balanced propagation delays  
SOT353-1 and SOT753 package options  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 )  
3. Ordering information  
Table 1.  
Ordering information  
Type number  
Package  
Temperature range  
40 C to +125 C  
Name  
Description  
Version  
74AHC1G00GW-Q100  
74AHCT1G00GW-Q100  
74AHC1G00GV-Q100  
74AHCT1G00GV-Q100  
TSSOP5  
plastic thin shrink small outline package; SOT353-1  
5 leads; body width 1.25 mm  
40 C to +125 C  
SC-74A  
plastic surface-mounted package; 5 leads SOT753  

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