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74ACT125B PDF预览

74ACT125B

更新时间: 2024-10-01 23:00:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 总线驱动器总线收发器逻辑集成电路光电二极管
页数 文件大小 规格书
8页 77K
描述
QUAD BUS BUFFERS 3-STATE

74ACT125B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP14,.3
针数:14Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.39.00.01
风险等级:5.35控制类型:ENABLE LOW
系列:ACTJESD-30 代码:R-PDIP-T14
JESD-609代码:e0负载电容(CL):50 pF
逻辑集成电路类型:BUS DRIVER最大I(ol):0.024 A
位数:1功能数量:4
端口数量:2端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP14,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 VProp。Delay @ Nom-Sup:10 ns
传播延迟(tpd):10 ns认证状态:Not Qualified
座面最大高度:5.1 mm子类别:Bus Driver/Transceivers
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

74ACT125B 数据手册

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74ACT125  
QUAD BUS BUFFERS (3-STATE)  
PRELIMINARY DATA  
HIGH SPEED: tPD = 6.5 ns (TYP.) at VCC = 5V  
LOW POWER DISSIPATION:  
ICC = 8 µA (MAX.) at TA = 25 oC  
COMPATIBLE WITH TTL OUTPUTS  
V
IH = 2V (MIN), V = 0.8V (MAX)  
IL  
50TRANSMISSION LINE DRIVING  
CAPABILITY  
SYMMETRICAL OUTPUT IMPEDANCE:  
|IOH| = IOL =24 mA (MIN)  
BALANCED PROPAGATION DELAYS:  
tPLH tPHL  
OPERATING VOLTAGE RANGE:  
B
M
(Plastic Package)  
(Micro Package)  
ORDER CODES :  
74ACT125B  
74ACT125M  
equivalentBipolar Schottky TTL.  
These devices require the same 3-STATE control  
input G to be taken high to make the output go in  
to the high impedance state.  
VCC (OPR) = 4.5V to 5.5V  
PIN AND FUNCTION COMPATIBLE WITH  
74 SERIES 125  
IMPROVED LATCH-UP IMMUNITY  
The device is designed to interface directly High  
Speed CMOS systems with TTL, NMOS and  
CMOS output voltage levels.  
All inputs and outputs are equipped with  
protection circuits against static discharge, giving  
them 2KV ESD immunity and transient excess  
voltage.  
DESCRIPTION  
The ACT125 is an high-speedCMOS QUAD BUS  
BUFFERS fabricated with sub-micron silicon gate  
and  
double-layer metal  
wiring  
C2MOS  
technology. It is ideal for low power applications  
maintaining high speed operation similar to  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
1/8  
May 1997  

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