Datasheet > 736LP4E

736LP4E

更新时间： 2024-09-17 12:50:15

品牌	Logo	应用领域
HITTITE		输出元件
页数	文件大小	规格书
6页	372K
描述
MMIC VCO w/ HALF FREQUENCY OUTPUT

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数据手册

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736LP4E 数据手册

HMC736LP4 / 736LP4E

v01.0209

MMIC VCO w/ HALF FREQUENCY OUTPUT

14.5 - 15.0 GHz

Typical Applications

The HMC736LP4(E) is ideal for:

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• SATCOM

Features

Dual Output: Fo = 14.5 - 15.0 GHz

Fo/2 = 7.25 - 7.5 GHz

Pout: +9 dBm

Phase Noise: -105 dBc/Hz @ 100 kHz

No External Resonator Needed

24 Lead 4x4mm SMT Package: 16mm²

• Military End-Use

Functional Diagram

General Description

The HMC736LP4(E) is a GaAs InGaP Heterojunction

Bipolar Transistor (HBT) MMIC VCO. The

HMC736LP4(E) integrates

a resonator, negative

resistance device, varactor diode and feature half

frequencyoutput. TheVCO’sphasenoiseperformance

is excellent over temperature, shock, and process due

to the oscillator’s monolithic structure. Power output

is +9 dBm typical from a +4.2V supply voltage. The

voltage controlled oscillator is packaged in a leadless

QFN 4x4 mm surface mount package, and requires no

external matching components.

Electrical Speciﬁcations, T_A= +25° C, Vcc = +4.2V

Parameter

Min.

Typ.

Max.

Units

Fo/2

14.5 - 15.0

7.25 - 7.5

GHz

Frequency Range

RFOUT

RFOUT/2

-8

-3

dBm

Power Output

SSB Phase Noise @ 100 kHz Offset,

Vtune= +5V @ RFOUT

-105

dBc/Hz

Tune Voltage

Vtune

180

Supply Current

120

150

2.5

µA

Tune Port Leakage Current (Vtune= 13V)

Output Return Loss

Harmonics/Subharmonics

1/2

3/2

-45

-42

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= 5V

Frequency Drift Rate

MHz pp

MHz/V

MHz/°C

1.2

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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