Datasheet > 7204L35TPGI8

7204L35TPGI8

更新时间： 2024-11-13 00:32:35

品牌	Logo	应用领域
艾迪悌 - IDT		先进先出芯片
页数	文件大小	规格书
14页	143K
描述
CMOS ASYNCHRONOUS FIFO

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数据手册

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7204L35TPGI8 数据手册

IDT7203

IDT7204

IDT7205

IDT7206

IDT7207

IDT7208

CMOS ASYNCHRONOUS FIFO

2,048 x 9, 4,096 x 9

8,192 x 9, 16,384 x 9

32,768 x 9 and 65,536 x 9

LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

•

Industrial temperature range (–40

(plastic packages only)

°C to +85°C) is available

FEATURES:

• First-In/First-Out Dual-Port memory

• Green parts available, see ordering information

• 2,048 x 9 organization (IDT7203)

• 4,096 x 9 organization (IDT7204)

DESCRIPTION:

• 8,192 x 9 organization (IDT7205)

• 16,384 x 9 organization (IDT7206)

• 32,768 x 9 organization (IDT7207)

• 65,636 x 9 organization (IDT7208)

• High-speed: 12ns access time

• Low power consumption

TheIDT7203/7204/7205/7206/7207/7208aredual-portmemorybuffers

withinternalpointersthatloadandemptydataonafirst-in/first-outbasis. The

deviceusesFullandEmptyflagstopreventdataoverflowandunderflowand

expansionlogictoallowforunlimitedexpansioncapabilityinbothwordsizeand

depth.

— Active: 660mW (max.)

— Power-down: 44mW (max.)

DataistoggledinandoutofthedevicethroughtheuseoftheWrite(W)and

Read (R) pins.

• Asynchronous and simultaneous read and write

• Fully expandable in both word depth and width

• 720x family is pin and functionally compatible from 256 x 9 to 64k x 9

• Status Flags: Empty, Half-Full, Full

• Retransmit capability

• High-performance CMOS technology

• Military product compliant to MIL-STD-883, Class B

• Standard Military Drawing for #5962-88669 (IDT7203), 5962-89567

(IDT7203), and 5962-89568 (IDT7204) are listed on this function

The device's 9-bit width provides a bit for a control or parity at the user’s

option. ItalsofeaturesaRetransmit(RT)capabilitythatallowsthereadpointer

to be reset to its initial position when RT is pulsed LOW. A Half-Full Flag is

available in the single device and width expansion modes.

These FIFOs are fabricated using high-speed CMOS technology. They

aredesignedforapplicationsrequiringasynchronousandsimultaneousread/

writesinmultiprocessing,ratebufferingandotherapplications.

MilitarygradeproductismanufacturedincompliancewithMIL-STD-883,

ClassB.

FUNCTIONAL BLOCK DIAGRAM

DATA INPUTS

)

(D -D

WRITE

CONTROL

RAM ARRAY

2,048 x 9

4,096 x 9

8,192 x 9

16,384 x 9

32,768 x 9

65,536 x 9

WRITE

POINTER

READ

POINTER

THREE-

STATE

BUFFERS

DATA OUTPUTS

)

READ

CONTROL

(Q₀-Q

RESET

LOGIC

FLAG

LOGIC

FL/RT

EXPANSION

LOGIC

XO/HF

2661 drw01

IDTandtheIDTlogoareregisteredtrademarksofIntegratedDeviceTechnology,Inc.

COMMERCIAL, MILITARY AND INDUSTRIAL TEMPERATURE RANGES

NOVEMBER 2017

DSC-2661/19

12 3 4 5 6 7...14

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