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7200L20JGB8 PDF预览

7200L20JGB8

更新时间： 2024-09-23 14:40:11
品牌 Logo 应用领域
艾迪悌 - IDT 时钟先进先出芯片内存集成电路
页数 文件大小 规格书
14页 308K
描述
FIFO, 256X9, 20ns, Asynchronous, CMOS, PQCC32

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中文翻译

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7200L20JGB8 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：ObsoleteReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.71
风险等级：5.31Is Samacsys：N
最长访问时间：20 ns最大时钟频率 (fCLK)：33.3 MHz
JESD-30 代码：R-PQCC-J32JESD-609代码：e3
内存集成电路类型：OTHER FIFO内存宽度：9
湿度敏感等级：1端子数量：32
字数：256 words字数代码：256
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-55 °C组织：256X9
封装主体材料：PLASTIC/EPOXY封装代码：QCCJ
封装等效代码：LDCC32,.5X.6封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
电源：5 V认证状态：Not Qualified
筛选级别：MIL-STD-883 Class B (Modified)最大待机电流：0.015 A
子类别：FIFOs最大压摆率：0.1 mA
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子面层：Matte Tin (Sn) - annealed端子形式：J BEND
端子节距：1.27 mm端子位置：QUAD
处于峰值回流温度下的最长时间：30Base Number Matches：1

7200L20JGB8 数据手册

 浏览型号7200L20JGB8的Datasheet PDF文件第2页浏览型号7200L20JGB8的Datasheet PDF文件第3页浏览型号7200L20JGB8的Datasheet PDF文件第4页浏览型号7200L20JGB8的Datasheet PDF文件第5页浏览型号7200L20JGB8的Datasheet PDF文件第6页浏览型号7200L20JGB8的Datasheet PDF文件第7页 
CMOS ASYNCHRONOUS FIFO  
256 x 9, 512 x 9 and 1,024 x 9  
IDT7200L  
IDT7201LA  
IDT7202LA  
•
•
Industrial temperature range (–40oC to +85oC) is available  
(plastic packages only)  
Green parts available, see ordering information  
FEATURES:  
• First-In/First-Out dual-port memory  
• 256 x 9 organization (IDT7200)  
• 512 x 9 organization (IDT7201)  
• 1,024 x 9 organization (IDT7202)  
• Low power consumption  
— Active: 440mW (max.)  
DESCRIPTION:  
TheIDT7200/7201/7202aredual-portmemoriesthatloadandemptydata  
onafirst-in/first-outbasis. ThedevicesuseFullandEmptyflagstopreventdata  
overflowandunderflowandexpansionlogictoallowforunlimitedexpansion  
capability in both word size and depth.  
—Power-down: 28mW (max.)  
• Ultra high speed—12ns access time  
• Asynchronous and simultaneous read and write  
• Fully expandable by both word depth and/or bit width  
• 720x family is pin and functionally compatible from 256 x 9 to 64k x 9  
• Status Flags: Empty, Half-Full, Full  
• Auto-retransmit capability  
• High-performance CEMOS™ technology  
• Military product compliant to MIL-STD-883, Class B  
• Standard Military Drawing #5962-87531, 5962-89666, 5962-89863  
and 5962-89536 are listed on this function  
• Dual versions available in the TSSOP package. For more informa-  
tion, see IDT7280/7281/7282 data sheet  
IDT7280 = 2 x IDT7200  
The reads and writes are internally sequential through the use of ring  
pointers,withnoaddressinformationrequiredtoloadandunloaddata. Data  
istoggledinandoutofthedevicesthroughtheuseoftheWrite(W)andRead  
(R) pins.  
Thedevicesutilizea9-bitwidedataarraytoallowforcontrolandparitybits  
attheuser’soption. Thisfeatureisespeciallyusefulindatacommunications  
applicationswhereitisnecessarytouseaparitybitfortransmission/reception  
errorchecking. ItalsofeaturesaRetransmit(RT)capabilitythatallowsforreset  
of the read pointer to its initial position when RT is pulsed LOW to allow for  
retransmissionfromthebeginningofdata. AHalf-FullFlagisavailableinthe  
singledevicemodeandwidthexpansionmodes.  
TheseFIFOsarefabricatedusinghigh-speedCMOStechnology. They  
aredesignedforthoseapplicationsrequiringasynchronousandsimultaneous  
read/writes in multiprocessing and rate buffer applications. Military grade  
productismanufacturedincompliancewithMIL-STD-883,ClassB.  
IDT7281 = 2 x IDT7201  
IDT7282 = 2 x IDT7202  
FUNCTIONAL BLOCK DIAGRAM  
DATA INPUTS  
(D0-D8)  
WRITE  
CONTROL  
W
RAM  
ARRAY  
256 x 9  
WRITE  
POINTER  
READ  
POINTER  
512 x 9  
1,024 x 9  
THREE-  
STATE  
BUFFERS  
RS  
DATA OUTPUTS  
READ  
(Q0-Q8)  
RESET  
LOGIC  
R
CONTROL  
FLAG  
LOGIC  
EF  
FF  
FL/RT  
EXPANSION  
2679 drw 01  
XO/HF  
XI  
LOGIC  
IDTandtheIDTlogoareregisteredtrademarksofIntegratedDeviceTechnology,Inc.  
JUNE 2012  
COMMERCIAL, INDUSTRIAL AND MILITARY TEMPERATURE RANGES  
1
©2012 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.  
DSC-2679/13  
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