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71V546S133PF PDF预览

71V546S133PF

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
21页 997K
描述
ZBT SRAM, 128KX36, 4.2ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100

71V546S133PF 数据手册

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128K x 36, 3.3V Synchronous IDT71V546S/XS  
SRAM with ZBTFeature,  
Burst Counter and Pipelined Outputs  
Features  
128K x 36 memory configuration, pipelined outputs  
Supports high performance system speed - 133 MHz  
(4.2 ns Clock-to-Data Access)  
clockcycle,andtwocycles laterits associateddatacycleoccurs,beit  
read or write.  
TheIDT71V546containsdataI/O,addressandcontrolsignalregis-  
ters. Outputenableistheonlyasynchronoussignalandcanbeusedto  
disabletheoutputsatanygiventime.  
AClockEnable (CEN)pinallows operationofthe IDT71V546tobe  
suspended as long as necessary. All synchronous inputs are ignored  
whenCENishighandtheinternaldeviceregisterswillholdtheirprevious  
values.  
Therearethreechipenablepins(CE1,CE2,CE2)thatallowtheuser  
todeselectthedevicewhendesired. Ifanyoneofthesethreeisnotactive  
whenADV/LDislow,nonewmemoryoperationcanbeinitiatedandany  
burst that was in progress is stopped. However, any pending data  
transfers(readsorwrites)willbecompleted. Thedatabuswilltri-statetwo  
cyclesafterthechipisdeselectedorawriteinitiated.  
ZBTTM Feature - No dead cycles between write and read  
cycles  
Internally synchronized registered outputs eliminate the  
need to control OE  
Single R/W (READ/WRITE) control pin  
Positive clock-edge triggered address, data, and control  
signal registers for fully pipelined applications  
4-word burst capability (interleaved or linear)  
Individual byte write (BW1 - BW4) control (May tie active)  
Three chip enables for simple depth expansion  
Single 3.3V power supply (±5%)  
Packaged in a JEDEC standard 100-pin TQFP package  
TheIDT71V546hasanon-chipburstcounter. Intheburstmode,the  
IDT71V546canprovidefourcyclesofdataforasingleaddresspresented  
totheSRAM. TheorderoftheburstsequenceisdefinedbytheLBOinput  
pin. TheLBOpinselectsbetweenlinearandinterleavedburstsequence.  
The ADV/LD signalis usedtoloada newexternaladdress (ADV/LD =  
LOW) orincrementtheinternalburstcounter(ADV/LD =HIGH).  
TheIDT71V546SRAMutilizesIDT'shigh-performance,high-volume  
3.3V CMOS process, and is packaged in a JEDEC standard 14mm x  
20mm100-pinthinplasticquadflatpack(TQFP)forhighboarddensity.  
Description  
The IDT71V546 is a 3.3V high-speed 4,718,592-bit (4.5 Megabit)  
synchronous SRAM organized as 128K x 36 bits. It is designed to  
eliminatedeadbuscycleswhenturningthebusaroundbetweenreads  
TM  
andwrites,orwritesandreads. ThusithasbeengiventhenameZBT ,  
or Zero Bus Turn-around.  
Address and control signals are applied to the SRAM during one  
PinDescriptionSummary  
A0  
- A16  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Three Chip Enables  
Output Enable  
CE1  
, CE  
2
, CE  
2
OE  
R/W  
Read/Write Signal  
Clock Enable  
CEN  
Individual Byte Write Selects  
Clock  
BW  
1
, BW  
2
, BW  
3
, BW  
4
CLK  
ADV/LD  
Advance Burst Address / Load New Address  
Linear / Interleaved Burst Order  
Data Input/Output  
Synchronous  
Static  
LBO  
I/O0  
- I/O31, I/OP1 - I/OP4  
Synchronous  
Static  
VDD  
3.3V Power  
Supply  
Supply  
VSS  
Ground  
Static  
3821 tbl 01  
OCTOBER 2008  
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.  
1
DSC-3821/05  
©2007IntegratedDeviceTechnology,Inc.  

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