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71T75902 PDF预览

71T75902

更新时间: 2023-12-20 18:44:57
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
24页 295K
描述
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM

71T75902 数据手册

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71T75902  
1M x 18  
2.5V Synchronous ZBT™ SRAM  
2.5V I/O, Burst Counter  
Flow-Through Outputs  
Features  
Three chip enables for simple depth expansion  
2.5V power supply (±5%)  
1M x 18 memory configuration  
Supports high performance system speed - 100 MHz  
2.5V (±5%) I/O Supply (VDDQ)  
Power down controlled by ZZ input  
Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)  
Packaged in a JEDEC standard 100-pin plastic thin quad  
flatpack (TQFP), 119 ball grid array (BGA)  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Green parts available, see Ordering Information  
(7.5 ns Clock-to-Data Access)  
ZBTTM Feature - No dead cycles between write and read cycles  
Internally synchronized output buffer enable eliminates the  
need to control OE  
Single R/W (READ/WRITE) control pin  
4-word burst capability (Interleaved or linear)  
Individual byte write (BW1 - BW2 control (May tie active)  
Functional Block Diagram — 1M x 18  
LBO  
1M x 18 BIT  
MEMORY ARRAY  
Address  
Address A [0:19]  
D
D
Q
Q
CE1,  
2, CE  
2
CE  
R/W  
Control  
CEN  
ADV/LD  
BWx  
DI  
DO  
D
Q
Control Logic  
Clk  
Mux  
Sel  
Clock  
Gate  
OE  
TMS  
Data I/O [0:15], I/O P[1:2]  
TDI  
TCK  
5319 drw 01a  
TDO  
JTAG  
TRST  
(optional)  
1
Apr.07.20  

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