Datasheet > 71T75802S150BG8

71T75802S150BG8

更新时间： 2025-09-22 19:36:11

品牌	Logo	应用领域
瑞萨 - RENESAS		时钟存储
页数	文件大小	规格书
28页	314K
描述
存储容量(Mb):18Mb（1M x 18）;内存数据长度(bit):1M ;字编码数(k):1M ;最大时钟频率(MHz):150 MHz;元器件封装:119-PBGA（14x22）;

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中文翻译

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数据手册

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71T75802S150BG8 数据手册

512K x 36, 1M x 18

71T75602

71T75802

2.5VSynchronousZBT™SRAMs

2.5V I/O, Burst Counter

PipelinedOutputs

Features

◆

512K x 36, 1M x 18 memory configurations

Individual byte write (BW1 - BW4) control (May tie active)

Three chip enables for simple depth expansion

2.5V power supply (±5%)

2.5V I/O Supply (VDDQ)

Power down controlled by ZZ input

Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA)

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆

Supports high performance system speed - 200 MHz

(3.2 ns Clock-to-Data Access)

ZBT^TMFeature - No dead cycles between write and read

◆

cycles

◆

Internally synchronized output buffer enable eliminates the

need to control OE

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

◆

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

◆

Green parts available, see ordering information

Functional Block Diagram - 512K x 36

LBO

512Kx36 BIT

MEMORY ARRAY

Address A [0:18]

Address

CE1, CE2, CE2

R/W

Control

CEN

ADV/LD

DI DO

Control Logic

Clk

Mux

Sel

Clock

Output Register

Gate

TMS

TDI

Data I/O [0:31],

I/O P[1:4]

JTAG

TDO

TCK

TRST

5313 drw 01

(optional)

ZBT^®andZeroBusTurnaroundaretrademarksofRenesasElectronicsCorporationandthearchitectureissupportedbyMicronTechnologyandMotorolaInc.

Sep.27.21

12 3 4 5 6 7...28

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与71T75802S150BG8相关器件

型号	品牌	获取价格	描述	数据表
71T75802S150BGG	IDT	获取价格	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs
71T75802S150BGG	RENESAS	获取价格	存储容量(Mb):18Mb（1M x 18）;内存数据长度(bit):1M ;字编码数(k
71T75802S150BGG8	IDT	获取价格	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs
71T75802S150BGG8	RENESAS	获取价格	存储容量(Mb):18Mb（1M x 18）;内存数据长度(bit):1M ;字编码数(k
71T75802S150BGGI	IDT	获取价格	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs
71T75802S150BGGI	RENESAS	获取价格	存储容量(Mb):18Mb（1M x 18）;内存数据长度(bit):1M ;字编码数(k
71T75802S150BGGI8	IDT	获取价格	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs
71T75802S150BGGI8	RENESAS	获取价格	存储容量(Mb):18Mb（1M x 18）;内存数据长度(bit):1M ;字编码数(k
71T75802S150BGI	IDT	获取价格	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs
71T75802S150BGI	RENESAS	获取价格	存储容量(Mb):18Mb（1M x 18）;内存数据长度(bit):1M ;字编码数(k