Datasheet > 70-W206NBA400SA-M786L

70-W206NBA400SA-M786L

更新时间： 2024-11-29 11:08:19

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	5191K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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70-W206NBA400SA-M786L 数据手册

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70-W206NBA400SA-M786L

flowBOOST 4w

600V/400A

Features

FlowSCREW 4w

● Symmetrical Booster

● Integrated DC-capacitor

● Low DC Inductance (<5nH)

● Transient Interface for optional

regeneration of switching losses

● Temperature Sensor

Target Applications

● UPS (3 Phase PFC)

● Solar inverter (Booster)

Schematic

Types

● 70-W206NBA400SA-M786L

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Input Boost IGBT

V_CES

I_C

Collector-emitter break down voltage

DC collector current

600

T_h=80°C

T_c=80°C

391

500

T_j=T_jmax

1200

I_Cpulse

t_plimited by T_jmax

Pulsed collector current

T_j≤150°C

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

1200

V_CE<=V_CES

T_h=80°C

T_c=80°C

639

968

P_tot

T_j=T_jmax

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

360

T_jmax

Maximum Junction Temperature

175

°C

Input Boost Inverse Diode

Peak Repetitive Reverse Voltage

Forward average current

V_RRM

I_FAV

600

T_h=80°C

T_c=80°C

T_j=T_jmax

I²t

A²s

t_p=10ms

T_j=25°C

I2t-value

I_FRM

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

T_h=80°C

T_c=80°C

113

160

P_tot

T_jmax

175

°C

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