Datasheet > 6N70F

6N70F

更新时间： 2023-12-06 20:03:26

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	672K
描述
场效应晶体管

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6N70F 数据手册

6N70F

N-Channel Power MOSFET

FEATURES



RDS(ON)=1.6Ω @ VGS=10V, ID=3A

Low gate charge (Typically 51nC)

Low CRSS (Typically 45pF)

High switching speed.

ITO-220AB

MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

700

±30

Gate -Source Voltage

V_GS

Drain Current Continuous at

T_C=25℃

I_D

TC=100°C

Drain Current(pulsed)Note1

I_DM

Power Dissipation

100

1.04

100

W/℃

P_D

Linear Derarting Factor

Avalanche Energy(Single Pulsed (Note 3))

E_AS

Avalanche Energy (Repetitive(Note 2))

Thermal Resistance,Junction-to-Ambient

Thermal Resistance,Junction-to-Case

Junction and StorageTemperature Range

E_AR

℃/W

℃

R_θJA

R_θJC

T_jT_stg

62.5

0.96

-55 to +150

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mail:lge@lgesemi.com

Revision:20170701-P1

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