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6N135 PDF预览

6N135

更新时间: 2024-11-15 14:54:11
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18页 8350K
描述
高速光耦

6N135 数据手册

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JIEJIE MICROELECTRONICS CO. , Ltd  
6N135,6N136,JOC4502,JOC4503 Series  
1Mbit/s High Speed Transistor Photo Coupler  
SCHEMATIC  
Description  
The 6N135, 6N136, JOC450X series combine an  
AlGaAs infrared emitting diode as the emitter  
which is optically coupled to a silicon high speed  
photo transistor in a plastic DIP8 package with  
different lead forming options.  
8
7
6
5
1
2
3
4
A separate design between photodiode and  
transistor reduces the base-collector capacitance  
of the input transistor which improves the speed  
by several orders of magnitude over conventional  
phototransistor optocouplers.  
PIN DEFINITION  
1.NC  
8.VCC  
2.Anode  
7.VB(for 6N135/6N136)  
NC(for JOC4502/JOC4503)  
6.VO  
Features  
High isolation 5000 VRMS  
DC input with transistor output  
Operating temperature range - 55 °C to  
100 °C  
3.Cathode  
4.NC  
5.GND  
OUTLINE  
REACH compliance  
Halogen free (Optional)  
MSL class 1  
Regulatory Approvals  
UL  
VDE  
Applications  
Line receivers  
Telecommunication equipment  
Out interface to CMOS-LSTTL-TTL  
Wide bandwidth analog coupling  
Pulse transformer replacement  
Computer-peripheral interface  
http://www.jjwdz.com  
TEL:+86-513-83639777  
1

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