5秒后页面跳转
6N1136-X009 PDF预览

6N1136-X009

更新时间: 2024-02-12 02:13:08
品牌 Logo 应用领域
威世 - VISHAY 晶体光电二极管光电二极管晶体管输出元件
页数 文件大小 规格书
10页 228K
描述
High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated

6N1136-X009 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.40.80.00
风险等级:5.79Is Samacsys:N
其他特性:TTL COMPATIBLE, UL APPROVED, VDE APPROVED配置:SINGLE
当前传输比率-最小值:15%标称数据速率:1 MBps
最大正向电流:0.025 A最大正向电压:1.9 V
最大绝缘电压:5300 V安装特点:SURFACE MOUNT
元件数量:1最大通态电流:0.008 A
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:LOGIC IC OUTPUT OPTOCOUPLER最大功率耗散:0.1 W
子类别:Optocoupler - Transistor Outputs表面贴装:YES
Base Number Matches:1

6N1136-X009 数据手册

 浏览型号6N1136-X009的Datasheet PDF文件第2页浏览型号6N1136-X009的Datasheet PDF文件第3页浏览型号6N1136-X009的Datasheet PDF文件第4页浏览型号6N1136-X009的Datasheet PDF文件第5页浏览型号6N1136-X009的Datasheet PDF文件第6页浏览型号6N1136-X009的Datasheet PDF文件第7页 
6N1135/ 6N1136  
Vishay Semiconductors  
High Speed Optocoupler, 1 MBd, Photodiode with Transistor  
Output, 110 °C Rated  
Features  
• Operating Temperature from -55 °C to +110 °C  
• Isolation Test Voltage: 5300 V  
• TTL Compatible  
RMS  
• High Bit Rates: 1.0 MBd  
• Bandwidth 2.0 MHz  
NC  
A
1
2
3
4
8
7
6
5
C (V  
)
CC  
B (V  
)
B
• Open-Collector Output  
• External Base Wiring Possible  
• Lead-free component  
C
C (V  
)
O
NC  
E (GND)  
i179081  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Pb  
e3  
Pb-free  
Signals can be transmitted between two electrically  
separated circuits up to frequencies of 2.0 MHz. The  
potential difference between the circuits to be coupled  
should not exceed the maximum permissible refer-  
ence voltages  
Agency Approvals  
• UL 1577 - File No. E52744 System Code H or J  
• DIN EN 60747-5-2 (VDE0884)  
• CUL - File No. E52744, equivalent to CSA bulletin  
5A  
Order Information  
Description  
Part  
Remarks  
The 6N1135 and 6N1136 are 110 °C rated optocou-  
plers with a GaAIAs infrared emitting diode, optically  
coupled with an integrated photo detector which con-  
sists of a photo diode and a high-speed transistor in a  
DIP-8 plastic package.  
6N1135  
6N1136  
CTR 7 %, DIP-8  
CTR 19 %, DIP-8  
6N1135-X007  
6N1136-X006  
6N1136-X007  
6N1136-X009  
CTR 7 %, SMD-8 (option 7)  
CTR 19 %, DIP-8 400 mil (option 6)  
CTR 19 %, SMD-8 (option 7)  
CTR 19 %, SMD-8 (option 9)  
For additional information on the available options refer to  
Option Information.  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Parameter  
Test condition  
Symbol  
VR  
Value  
5.0  
Unit  
V
Reverse voltages  
Forward current  
IF  
25  
50  
mA  
mA  
A
Peak forward current  
t = 1.0 ms, duty cycle 50 %  
IFM  
Maximum surge forward current t 1.0 µs, 300 pulses/s  
IFSM  
Rth  
1.0  
700  
45  
Thermal resistance  
K/W  
mW  
Power dissipation  
Tamb = 70 °C  
Pdiss  
Document Number 83909  
Rev. 1.5, 26-Oct-04  
www.vishay.com  
1

与6N1136-X009相关器件

型号 品牌 描述 获取价格 数据表
6N1136-X009T VISHAY 暂无描述

获取价格

6N-12 APITECH Fixed Attenuator, 0MHz Min, 6000MHz Max, ROHS COMPLIANT PACKAGE

获取价格

6N120 UTC N-CH

获取价格

6N-12F APITECH Fixed Attenuator, 0MHz Min, 6000MHz Max, ROHS COMPLIANT PACKAGE

获取价格

6N-12M APITECH Fixed Attenuator, 0MHz Min, 6000MHz Max, ROHS COMPLIANT PACKAGE

获取价格

6N134 AGILENT Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers

获取价格