是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
最大集电极电流 (IC): | 450 A | 集电极-发射极最大电压: | 1700 V |
门极-发射极最大电压: | 20 V | 元件数量: | 3 |
最高工作温度: | 150 °C | 最大功率耗散 (Abs): | 1665 W |
子类别: | Insulated Gate BIP Transistors | VCEsat-Max: | 2.9 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
6MBI30F-060 | FUJI |
获取价格 |
IGBT(600V/30A) | |
6MBI30FA060 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C) | |
6MBI30FA-060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, M603, 11 PIN | |
6MBI30L-060 | FUJI |
获取价格 |
IGBT(600V/30A) | |
6MBI30S-060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel | |
6MBI35PC-120 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | |
6MBI35PC-120L | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | |
6MBI35S-120 | FUJI |
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IGBT(1200V/35A) | |
6MBI35S-120L | FUJI |
获取价格 |
IGBT(1200V/6x35A) | |
6MBI35S-140 | FUJI |
获取价格 |
1400V / 35A 6 in one-package |