生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X19 |
针数: | 19 | Reach Compliance Code: | unknown |
风险等级: | 5.81 | Is Samacsys: | N |
最大集电极电流 (IC): | 50 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | 最小直流电流增益 (hFE): | 750 |
JESD-30 代码: | R-PUFM-X19 | 元件数量: | 6 |
端子数量: | 19 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
6DI50M-120 | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 900V V(BR)CEO | 50A I(C) | |
6DI50MA-050 | ETC |
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6DI50Z-120 | ETC |
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6DI75A-050 | ETC |
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6DI75B050 | ETC |
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TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) | |
6DI75M-050 | FUJI |
获取价格 |
Power Bipolar Transistor, 75A I(C), 600V V(BR)CEO, 6-Element, NPN, Silicon, M609, 19 PIN | |
6DI75MA-050 | ETC |
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TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) | |
6DMRW4 | GAPTEC |
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6W - Single Output - Wide Input - Isolated & Regulated | |
6DMRW4_11005S2.25 | GAPTEC |
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6W - Single Output - Wide Input - Isolated & Regulated | |
6DMRW4_11012S2.25 | GAPTEC |
获取价格 |
6W - Single Output - Wide Input - Isolated & Regulated |