生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X11 |
针数: | 11 | Reach Compliance Code: | unknown |
风险等级: | 5.81 | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 600 V | 配置: | COMPLEX |
最小直流电流增益 (hFE): | 100 | 最大降落时间(tf): | 4000 ns |
JESD-30 代码: | R-XUFM-X11 | 元件数量: | 6 |
端子数量: | 11 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 230 W |
最大功率耗散 (Abs): | 230 W | 认证状态: | Not Qualified |
最大上升时间(tr): | 3000 ns | 子类别: | BIP General Purpose Power |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 15000 ns |
最大开启时间(吨): | 1500 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
6DI50M-050 | FUJI |
获取价格 |
POWER TRANSISTOR MODULE | |
6DI50M-120 | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 900V V(BR)CEO | 50A I(C) | |
6DI50MA-050 | ETC |
获取价格 |
||
6DI50Z-120 | ETC |
获取价格 |
||
6DI75A-050 | ETC |
获取价格 |
||
6DI75B050 | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) | |
6DI75M-050 | FUJI |
获取价格 |
Power Bipolar Transistor, 75A I(C), 600V V(BR)CEO, 6-Element, NPN, Silicon, M609, 19 PIN | |
6DI75MA-050 | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) | |
6DMRW4 | GAPTEC |
获取价格 |
6W - Single Output - Wide Input - Isolated & Regulated | |
6DMRW4_11005S2.25 | GAPTEC |
获取价格 |
6W - Single Output - Wide Input - Isolated & Regulated |