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6CWT10FN-E PDF预览

6CWT10FN-E

更新时间: 2024-11-11 07:59:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 135K
描述
High Performance Schottky Generation 5.0, 2 x 3 A

6CWT10FN-E 数据手册

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VS-6CUT10-E, VS-6CWT10FN-E  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Generation 5.0, 2 x 3 A  
FEATURES  
• 175 °C high performance Schottky diode  
• Very low forward voltage drop  
• Extremely low reverse leakage  
I-PAK (TO-251AA)  
D-PAK (TO-252AA)  
• Optimized VF vs. IR trade off for high efficiency  
Base  
Base  
common  
cathode  
common  
cathode  
• Increased ruggedness for reverse avalanche  
capability  
4
4
• RBSOA available  
• Negligible switching losses  
• Submicron trench technology  
• Compliant to RoHS Directive 2002/95/EC  
2
Common  
cathode  
1
3
1
3
Anode  
Anode  
2
Anode  
Anode  
Common  
cathode  
APPLICATIONS  
VS-6CUT10-E  
VS-6CWT10FN-E  
• Specific for PV cells bypass diode  
• High efficiency SMPS  
• High frequency switching  
• Output rectification  
PRODUCT SUMMARY  
D-PAK (TO-252AA),  
I-PAK (TO-251AA)  
Package  
IF(AV)  
VR  
2 x 3 A  
100 V  
• Reverse battery protection  
• Freewheeling  
VF at IF  
0.63 V  
• DC/DC systems  
IRM max.  
TJ max.  
Diode variation  
EAS  
1 mA at 125 °C  
175 °C  
• Increased power density systems  
Common cathode  
12 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
VF  
CHARACTERISTICS  
VALUES  
100  
UNITS  
V
3 Apk, TJ = 125 °C (typical, per leg)  
Range  
0.6  
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-6CUT10-E  
SYMBOL  
TEST CONDITIONS  
TJ = 25 °C  
UNITS  
VS-6CWT10FN-E  
Maximum DC reverse voltage  
VR  
100  
V
Revision: 03-Nov-11  
Document Number: 94662  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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