Datasheet > 6CWT10FN-E

6CWT10FN-E

更新时间： 2024-11-11 07:59:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	135K
描述
High Performance Schottky Generation 5.0, 2 x 3 A

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中文翻译

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数据手册

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6CWT10FN-E 数据手册

VS-6CUT10-E, VS-6CWT10FN-E

www.vishay.com

Vishay Semiconductors

High Performance Schottky Generation 5.0, 2 x 3 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

I-PAK (TO-251AA)

D-PAK (TO-252AA)

• Optimized V_Fvs. I_Rtrade off for high efficiency

Base

common

cathode

common

cathode

• Increased ruggedness for reverse avalanche

capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS Directive 2002/95/EC

Common

cathode

Anode

Common

cathode

APPLICATIONS

VS-6CUT10-E

VS-6CWT10FN-E

• Specific for PV cells bypass diode

• High efficiency SMPS

• High frequency switching

• Output rectification

PRODUCT SUMMARY

D-PAK (TO-252AA),

I-PAK (TO-251AA)

Package

I_F(AV)

V_R

2 x 3 A

100 V

• Reverse battery protection

• Freewheeling

V_Fat I_F

0.63 V

• DC/DC systems

I_RMmax.

T_Jmax.

Diode variation

E_AS

1 mA at 125 °C

175 °C

• Increased power density systems

Common cathode

12 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

V_RRM

V_F

CHARACTERISTICS

VALUES

100

UNITS

3 A_pk, T_J= 125 °C (typical, per leg)

Range

0.6

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

VS-6CUT10-E

SYMBOL

TEST CONDITIONS

T_J= 25 °C

UNITS

VS-6CWT10FN-E

Maximum DC reverse voltage

V_R

100

Revision: 03-Nov-11

Document Number: 94662

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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