6A05G THRU 6A10G
GLASS PASSIVATED RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current -6.0Amperes
SEMICONDUCTOR
KI
High forward current capability
DO-201AD
FEATURES
The plastic package carries Underwrites LaboratoryFlammability Classification 94V-0
High reliability
1.0(25.4)
MIN
High surge current capability
Construction utilizes void-free molded plastic technique
High temperature soldering guaranteed:260 C/10 seconds at terminals
Component in accordance to RoHs 2002/95/EC and WEEE 2002/96/EC
0.210(5.3)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial lead, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
1.0(25.4)
MIN
0.052(1.32)
0.045(1.14)
DIA
Weight: 0.41ounce, 1.15 grams
Dimensions in inches and (millimetrers)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave 60Hz,,resistive or inductive
load. For capacitive load, derate by 20%.)
6A1G
Symbols
6A05G
6A2G 6A3G 6A4G 6A6G 6A8G 6A10G
Unis
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
50
35
50
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
Volts
Volts
Volts
100
1000
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length TA=60 C
6.0
I(AV)
IFSM
VF
Amps
Amps
Peak forward surge current (8.3ms half sine-
wave superimposed on rated load
(JEDEC method)
200.0
1.1
Maximum instantaneous forward voltage
at 6.0 A
Volts
Maximum reverse
current at rated DC blocking
voltage
5
T
=25 C
A
IR
A
T
=125 C
100.0
A
Maximum Full Load Reverse Current,Full
Cycle Average .375"(9.5mm)Lead Length
@TA=75°C
HTIR
A
5.0
Typical thermal resistance (Note 2)
Typical junction capacitance (Note 1)
Operating and Storage temperature range
R JA
CJ
C/W
35.0
90
PF
C
TJ
-65 to+150
TSTG
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C .
2.Mount on Cu-Pad Size 16mm 16mm on P.C.B.
KISEMICONDUCTOR
1.