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6A10S(G) PDF预览

6A10S(G)

更新时间: 2024-01-21 14:28:32
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 1432K
描述
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6A10S(G) 技术参数

Case Style:DO-27IF(A):6.0
Maximum recurrent peak reverse voltage:1000Peak forward surge current:400
Maximum instantaneous forward voltage:1.0@IVA(A):6.0
Maximum reverse current:10.0TRR(nS):/
class:Diodes

6A10S(G) 数据手册

 浏览型号6A10S(G)的Datasheet PDF文件第2页 
6A05S-6A10S  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 6.0 A  
Features  
DO-27  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned witn Freon,Alcohol,lsopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC DO-27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Dimensions in millimeters  
Polarity: Color band denotes cathode  
Weight:0.041 ounces,1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
6A05S 6A1S  
6A2S  
6A4S  
6A6S  
6A8S  
6A10S UNITS  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
A
6.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
A
V
8.3ms single half-sine-w ave  
400.0  
1.0  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 6.0 A  
VF  
Maximum reverse current  
@TA=25  
10.0  
100.0  
IR  
A
at rated DC blocking voltage @TA=100  
p F  
/W  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
120  
CJ  
10  
Rθ  
JA  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance f rom junction to ambient.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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