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6A10G PDF预览

6A10G

更新时间: 2024-02-22 12:52:12
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 整流二极管
页数 文件大小 规格书
2页 321K
描述
GLASS PASSIVATED RECTIFIERS

6A10G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.08
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:O-PALF-W2湿度敏感等级:1
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1000 V
最大反向电流:10 µA表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

6A10G 数据手册

 浏览型号6A10G的Datasheet PDF文件第2页 
CURRENT 6.0 Amperes  
VOLTAGE 50 to 1000 Volts  
6A05G THRU 6A100G  
Features  
· The plastic package carries Underwrites Laboratory  
Flammability Classification 94V-0  
· High current capability  
P-6  
· Low reverse leakage  
· Glass passivated junction  
· Low forward voltage drop  
· High temperature soldering guaranteed : 350/10 seconds,  
0.375"(9.5mm) lead length, 5 lbs, (2.3kg) tension  
0.360(9.1)  
0.340(8.6)  
1.0(25.4)  
DIA.  
MIN.  
0.360(9.1)  
0.340(8.6)  
Mechanical Data  
· Case : P-6 molded plastic body  
· Terminals : Lead solderable per MIL-STD-750,  
method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
1.0(25.4)  
MIN.  
0.052(1.3)  
0.048(1.2)  
DIA.  
· Weight : 0.007 ounce, 2.1 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
Symbols  
Units  
6A05G 6A10G 6A20G  
6A40G  
6A60G 6A80G 6A100G  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
Volts  
Volts  
Volts  
V
100  
1000  
Maximum DC blocking voltage  
VDC  
Maximum average forward rectified current  
0.375"(9.5mm) lead length (see Fig.1)  
I
(AV)  
6.0  
400.0  
1.1  
Amps  
Amps  
Peak forward surge current 8.3ms half sine  
wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum instantaneous forward voltage  
at 6.0A  
V
F
Volts  
Maximum reverse current  
at rated DC blocking voltage  
T
T
A
=25℃  
10.0  
100.0  
20.0  
4.0  
I
R
μA  
A=100℃  
RθJA  
RθJL  
Typical thermal resistance (Note 2)  
/W  
Typical junction capacitance (Note 1)  
150  
pF  
CJ  
T
J
Operating and storage temperature range  
-50 to +175  
TSTG  
Notes:  
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.  
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted  
with 1.1×1.1"(30×30mm) copper pads.  

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TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER