Datasheet > 6A05G_V01

6A05G_V01

更新时间： 2022-02-26 14:40:20

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	556K
描述
GLASS PASSIVATED SILICON RECTIFIER

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数据手册

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6A05G_V01 数据手册

6A05G THRU 6A10G

Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Ampere

GLASS PASSIVATED SILICON RECTIFIER

Features

R-6

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0



1.0 (25.4)

MIN.

Construction utilizes void-free molded plastic technique

Low reverse leakage



0.360 (9.1)

0.340(8.6)

High forward surge current capability

DIA.

High temperature soldering guaranteed:

250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

0.360(9.1)

0.340(8.6)

Mechanical Data

1.0 (25.4)

MIN.

Case : JEDEC R-6 Molded plastic body

0.052 (1.3)

0.048 (1.2)

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

DIA.

Dimensions in inches and (millimeters)

Weight

: 0.072 ounce, 2.05 grams

Maximum Ratings And Electrical Characteristics

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

6A05G 6A1G 6A2G 6A4G 6A6G 6A8G 6A10G

Parameter

SYMBOLS

UNITS

MDD MDD MDD MDD MDD MDD MDD

6A05G 6A1G 6A2G 6A4G 6A6G 6A8G 6A10G

Marking Code

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

V^RRM

V^RMS

V^DC

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^A=60°C

Peak forward surge current

I^(AV)

6.0

I^FSM

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

300

V^F

I^R

0.95

Maximum instantaneous forward voltage at 6.0A

10.0

400

Maximum DC reverse current

at rated DC blocking voltage

T^A=25°C

T^A=100°C

°C/W

°C

C^J

150

Typical junction capacitance (NOTE 1)

R^θJA

T^J,T^STG

10.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

-50 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

DN:T19821A0

https://www.microdiode.com

Rev:2019A0

Page :1

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