Datasheet > 669A

669A

更新时间： 2024-11-05 06:30:59

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	401K
描述
NPN Epitaxial P lanar Transistors

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数据手册

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669A 数据手册

WTM669A

NPN Epitaxial Planar Transistors

SOT-89

P b

Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

ABSOLUTE MAXIMUM RATINGS (T =25˚C)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

Limits

Unit

CBO

180

160

CEO

EBO

1.5

C(DC)

Collector Current

C(Pulse)

Collector Power Dissipation

Junction Temperature

˚C

150

-55 to +150

Storage Temperature Range

stg

Device Marking

WTM669A=669A

ELECTRICAL CHARACTERISTICS(T =25˚Cunless otherwise noted)

Min

Typ

Parameter

Symbol

Max

Unit

Collector-Base Breakdown Voltage

180

CBO

CEO

EBO

I =1mA, I =0

Collector-Emitter Breakdown Voltage

I =10mA, I =0

160

Emitter-Base Breakdown Voltage

I =1mA, I =0

Collector Cutoﬀ Current

µA

CBO

=160V, I =0

WEITRON

http://www.weitron.com.tw

1/4

01-Aug-05

12 3 4

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