Datasheet > 65N06_18

65N06_18

更新时间： 2024-09-21 01:23:31

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	316K
描述
isc N-Channel MOSFET Transistor

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65N06_18 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

65N06

FEATURES

·Drain Current –I_D=63A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 60V(Min)

·Static Drain-Source On-Resistance

: R_DS(on)= 0.018Ω(Max)

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

Drain-Source Voltage

VALUE

UNIT

Gate-Source Voltage-Continuous

Drain Current-Continuous

±20

I_DM

Drain Current-Single Plused

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

240

P_D

150

℃

175

T_J

-55~175

T_stg

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-c}

PARAMETER

MAX

1.05

62.5

UNIT

℃/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-a}

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