5秒后页面跳转
646LP2E PDF预览

646LP2E

更新时间: 2024-01-09 09:29:50
品牌 Logo 应用领域
HITTITE 开关
页数 文件大小 规格书
8页 241K
描述
GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz

646LP2E 数据手册

 浏览型号646LP2E的Datasheet PDF文件第2页浏览型号646LP2E的Datasheet PDF文件第3页浏览型号646LP2E的Datasheet PDF文件第4页浏览型号646LP2E的Datasheet PDF文件第5页浏览型号646LP2E的Datasheet PDF文件第6页浏览型号646LP2E的Datasheet PDF文件第7页 
HMC646LP2 / 646LP2E  
v02.1009  
GaAs MMIC 40W FAILSAFE  
SWITCH, 0.1 - 2.1 GHz  
Typical Applications  
Features  
The HMC646LP2(E) is ideal for:  
• LNA Protection & T/R Switching  
• TD-SCDMA / 3G Infrastructure  
• Satellite Subscriber Terminals  
High Input P0.1dB: +46 dBm Tx  
Low Insertion Loss: 0.4 dB  
High IIP3: +74 dBm  
Single Positive Control: 0/+3V to 0/+8V  
Failsafe operation; Tx ‘On’ when unpowered  
2x2mm DFN SMT Package  
• Private Mobile Radio & Public Safety Handsets  
• Automotive Telematics  
General Description  
Functional Diagram  
The HMC646LP2(E) is an SPDT switch in a leadless  
DFN surface mount plastic package for use in trans-  
mit / receive and LNA protection applications which  
require very low distortion and high power handling  
of up to 40 watts with less than 10% duty cycle. This  
robust switch can control signals from 100 - 2100  
MHz* and is ideal for TD-SCDMA / 3G repeaters,  
PMR, automotive telematics, and satellite subscriber  
terminal applications. The design provides excep-  
tional P0.1dB of +46 dBm and +74 dBm IIP3 on the  
Transmit (Tx) port. The failsafe topology provides a  
low loss path from Tx to RFC, when no DC power is  
available.  
11  
Electrical Specifications, TA = +25°C, Vdd= 5V, Vctl = 0/+5 Vdc, 50 Ohm System*  
Parameter  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max  
Units  
MHz  
Frequency Range  
Insertion Loss  
869 - 960  
1525 - 1661  
2010 - 2025  
Tx - RFC  
RFC - Rx  
0.3  
0.4  
0.6  
0.7  
0.6  
0.8  
0.9  
1.1  
0.7  
1.3  
1.0  
1.7  
dB  
dB  
Tx - RFC  
RFC - Rx  
20  
28  
27  
38  
15  
20  
22  
30  
12  
25  
17  
32  
dB  
dB  
Isolation  
Tx - RFC  
RFC - Rx  
17  
25  
27  
20  
25  
12  
dB  
dB  
Return Loss  
Input Power for 0.1 dB  
Compression  
Tx - RFC  
RFC - Rx  
44  
20  
46  
20  
46  
20  
dBm  
dBm  
Input Third Order  
Intercept (Two-tone input  
power = +17 dBm each tone)  
Tx - RFC  
RFC - Rx  
71  
41  
74  
42  
74  
34  
dBm  
dBm  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, (50% CTL to 90% RF)  
tOFF (50% CTL to 10% RF)  
100  
320  
320  
100  
320  
320  
100  
320  
320  
ns  
ns  
ns  
* Specifications and data reflect HMC646LP2(E) measured using the respective application circuits for each  
designated frequency band found herein  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 216  

与646LP2E相关器件

型号 品牌 获取价格 描述 数据表
646NH/2:INDBAGGED ETC

获取价格

KIPPSCHALTER 2POL EIN EIN KSHEBEL
646QE-151N TOKO

获取价格

General Purpose Inductor, 150uH, 30%, 1 Element, SMD
646QE-181N TOKO

获取价格

General Purpose Inductor, 180uH, 30%, 1 Element, SMD
646QE-271N TOKO

获取价格

General Purpose Inductor, 270uH, 30%, 1 Element, SMD
646QE-471N TOKO

获取价格

General Purpose Inductor, 470uH, 30%, 1 Element, SMD
646QY-120N TOKO

获取价格

General Purpose Inductor, 12uH, 30%, 1 Element, SMD
646QY-121N TOKO

获取价格

General Purpose Inductor, 120uH, 30%, 1 Element, SMD
646QY-150N TOKO

获取价格

General Purpose Inductor, 15uH, 30%, 1 Element, SMD
646QY-180N TOKO

获取价格

General Purpose Inductor, 18uH, 30%, 1 Element, SMD
646QY-220N TOKO

获取价格

General Purpose Inductor, 22uH, 30%, 1 Element, SMD