®
IS61S6432
64K x 32 SYNCHRONOUS
PIPELINE STATIC RAM
ISSI
JUNE 2001
FEATURES
DESCRIPTION
The ISSI IS61S6432 is a high-speed, low-power
synchronous static RAM designed to provide a burstable,
high-performance, secondary cache for the Pentium™,
680X0™, and PowerPC™ microprocessors. It is organized
as 65,536 words by 32 bits, fabricated withISSI'sadvanced
CMOS technology. The device integrates a 2-bit burst
counter, high-speed SRAM core, and high-drive capability
outputs into a single monolithic circuit. All synchronous
inputs pass through registers controlled by a positive-edge-
triggered single clock input.
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin TQFP and PQFP package
• Single +3.3V power supply
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3
controls DQ17-DQ24, BW4 controls DQ25-DQ32,
conditionedbyBWEbeingLOW.ALOWonGWinputwould
cause all bytes to be written.
• Two Clock enables and one Clock disable to
eliminate multiple bank bus contention
• Control pins mode upon power-up:
– MODE in interleave burst mode
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IS61S6432 and controlled by the ADV
(burst address advance) input pin.
– ZZ in normal operation mode
These control pins can be connected to GNDQ
or VCCQ to alter their power-up state
• Industrial temperature available
Asynchronous signals include output enable (OE), sleep
modeinput(ZZ),clock(CLK)andburstmodeinput(MODE).
A HIGH input on the ZZ pin puts the SRAM in the power-
down state. When ZZ is pulled LOW (or no connect), the
SRAM normally operates after three cycles of the wake-up
period. A LOW input, i.e., GNDQ, on MODE pin selects
LINEARBurst. AVCCQ (ornoconnect)onMODEpinselects
INTERLEAVED Burst.
FAST ACCESS TIME
Symbol
tKQ
Parameter
-200(1)
-166
5
-133
5
-117
5
-5
5
-6
6
-7
7
-8
8
Unit
ns
CLK Access Time
Cycle Time
4
5
tKC
6
7.5
133
8.5
117
10
100
12
83
13
75
15
66
ns
—
Frequency
200
166
MHz
Note:
1. ADVANCE INFORMATION ONLY.
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. • 1-800-379-4774
Rev. B
1
06/28/01