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618LP3E PDF预览

618LP3E

更新时间: 2024-01-15 05:22:48
品牌 Logo 应用领域
HITTITE 放大器
页数 文件大小 规格书
10页 327K
描述
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz

618LP3E 数据手册

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HMC618LP3 / 618LP3E  
v04.0508  
GaAs SMT PHEMT LOW NOISE  
AMPLIFIER, 1.7 - 2.2 GHz  
5
Features  
Typical Applications  
The HMC618LP3(E) is ideal for:  
• Cellular/3G and LTE/WiMAX/4G  
• BTS & Infrastructure  
Noise Figure: 0.75 dB  
Gain: 19 dB  
OIP3: 36 dBm  
• Repeaters and Femto Cells  
• Public Safety Radios  
Single Supply: +3V to +5V  
50 Ohm Matched Input/Output  
16 Lead 3x3mm SMT Package: 9 mm2  
Functional Diagram  
General Description  
The HMC618LP3(E) is a GaAs PHEMT MMIC  
Low Noise Amplifier that is ideal for Cellular/3G and  
LTE/WiMAX/4G basestation front-end receivers  
operating between 1.7 - 2.2 GHz. The amplifier has  
been optimized to provide 0.75 dB noise figure,  
19 dB gain and +36 dBm output IP3 from a single  
supply of +5V. Input and output return losses are  
excellent and the LNA requires minimal external  
matching and bias decoupling components. The  
HMC618LP3(E) shares the same package and  
pinout with the HMC617LP3(E) 0.55 - 1.2 GHz LNA.  
The HMC618LP3(E) can be biased with +3V to +5V  
and features an externally adjustable supply current  
which allows the designer to tailor the linearity  
performance of the LNA for each application. The  
HMC618LP3(E) is an ideal replacement for the  
HMC375LP3(E).  
Electrical Specifications, TA = +25° C, Rbias = 10K  
Vdd = 3 Vdc  
Parameter  
Vdd = 5 Vdc  
Units  
Min.  
Typ.  
1700 - 2000  
18  
Max.  
Min.  
Typ.  
2000 - 2200  
15.8  
Max.  
1.2  
Min.  
16  
Typ.  
1700 - 2000  
19  
Max.  
Min.  
Typ.  
2000 - 2200  
17  
Max.  
Frequency Range  
Gain  
MHz  
dB  
15  
12.5  
13.5  
Gain Variation Over Temperature  
Noise Figure  
0.009  
0.90  
0.009  
0.9  
0.008  
0.75  
0.008  
0.85  
dB/°C  
dB  
1.2  
1.1  
1.15  
Input Return Loss  
Output Return Loss  
17  
19  
18  
19.5  
dB  
13  
11  
12.5  
9.5  
dB  
Output Power for 1 dB  
Compression (P1dB)  
12  
15  
13.5  
15  
16.5  
20  
18  
20  
dBm  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Supply Current (Idd)  
16  
28  
47  
16  
28  
47  
20.5  
35  
21  
36  
dBm  
dBm  
mA  
65  
65  
117  
155  
117  
155  
* Rbias resistor sets current, see application circuit herein  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 256  

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