Datasheet > 6116SA20P

6116SA20P

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
11页	611K
描述
Standard SRAM, 2KX8, 19ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

6116SA20P 数据手册

CMOS Static RAM

16K (2K x 8-Bit)

IDT6116SA

IDT6116LA

Features

Description

◆

High-speed access and chip select times

The IDT6116SA/LA is a 16,384-bit high-speed static RAM

organized as 2K x 8. It is fabricated using IDT's high-performance,

high-reliabilityCMOStechnology.

– Military:20/25/35/45/55/70/90/120/150ns(max.)

– Industrial:20/25/35/45ns(max.)

– Commercial:15/20/25/35/45ns(max.)

Low-power consumption

Battery backup operation

– 2V data retention voltage (LA version only)

Produced with advanced CMOS high-performance

technology

CMOS process virtually eliminates alpha particle soft-error consumesonly1µWto4µWoperatingoffa2Vbattery.

Access times as fastas 15ns are available. The circuitalsooffers a

reduced power standby mode. When CS goes HIGH, the circuit will

automatically go to, and remain in, a standby power mode, as long

as CS remains HIGH. This capability provides significant system level

power and cooling savings. The low-power (LA) version also offers a

battery backup data retention capability where the circuit typically

◆

rates

AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully

static asynchronous circuitry is used, requiring no clocks or refreshing

foroperation.

TheIDT6116SA/LAispackagedin24-pin600and300milplasticor

ceramicDIP,24-leadgull-wingSOIC,and24-leadJ-bendSOJproviding

highboard-levelpackingdensities.

◆

Input and output directly TTL-compatible

Static operation: no clocks or refresh required

Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,

24-pin SOIC and 24-pin SOJ

◆

Military product compliant to MIL-STD-833, Class B

Military grade product is manufactured in compliance to the latest

version of MIL-STD-883, Class B, making it ideally suited to military

temperatureapplicationsdemandingthehighestlevelofperformanceand

reliability.

FunctionalBlockDiagram

128 X 128

MEMORY

ARRAY

ADDRESS

DECODER

GND

A ₁₀

I/O

I/O CONTROL

INPUT

DATA

CIRCUIT

I/O₇

CONTROL

CIRCUIT

3089 drw 01

JANUARY 2009

DSC-3089/06

12 3 4 5 6 7...11

中文翻译

下载PDF

与6116SA20P相关器件

型号	品牌	获取价格	描述	数据表
6116SA20PGI	IDT	获取价格	Standard SRAM, 2KX8, 19ns, CMOS, PDIP24, 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-24
6116SA20SO8	IDT	获取价格	Standard SRAM, 2KX8, 20ns, CMOS, PDSO24, 0.300 INCH, SOIC-24
6116SA20SOB	IDT	获取价格	Standard SRAM, 2KX8, 19ns, CMOS, PDSO24, 0.300 INCH, SOIC-24
6116SA20SOGI8	IDT	获取价格	High-speed access and chip select times
6116SA20TPB	IDT	获取价格	Standard SRAM, 2KX8, 19ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
6116SA20TPGI8	IDT	获取价格	High-speed access and chip select times
6116SA20Y8	IDT	获取价格	Standard SRAM, 2KX8, 20ns, CMOS, PDSO24
6116SA20YGI	IDT	获取价格	Standard SRAM, 2KX8, 19ns, CMOS, PDSO24, 0.300 INCH, ROHS COMPLIANT, SOJ-24
6116SA20YI	IDT	获取价格	Application Specific SRAM, 2KX8, 20ns, CMOS, PDSO24
6116SA20YI8	IDT	获取价格	Standard SRAM, 2KX8, 20ns, CMOS, PDSO24