CMOS Static RAM
16K (2K x 8-Bit)
6116SA
6116LA
Features
Description
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High-speed access and chip select times
TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganized
as2Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOS
technology.
– Commercial:15/20/25ns(max.)
– Industrial:20/25ns(max.)
– Military:20/25/35/45/55/70/90/120/150ns(max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error 4µWoperatingoffa2Vbattery.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automaticallygoto,andremainin,astandbypowermode,aslongasCS
remainsHIGH.Thiscapabilityprovidessignificantsystemlevelpowerand
coolingsavings. Thelow-power(LA)versionalsooffersabatterybackup
dataretentioncapabilitywherethecircuittypicallyconsumesonly1µWto
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rates
AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully
staticasynchronouscircuitryisused,requiringnoclocksorrefreshingfor
operation.
TheIDT6116SA/LAispackagedin24-pin300milplasticDIP,24-pin
600miland300milceramicDIP,or24-leadgull-wingSOICprovidinghigh
board-levelpackingdensities.
Militarygradeproductismanufacturedincomplianceto MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demandingthehighestlevelofperformanceandreliability.
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Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Availableinceramic24-pinDIP,ceramicandplastic24-pinThin
Dip and 24-pin SOIC
Military product compliant to MIL-STD-833, Class B
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
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Green parts available, see ordering information
FunctionalBlockDiagram
A0
CC
V
128 X 128
MEMORY
ARRAY
ADDRESS
DECODER
GND
A10
I/O0
I/O CONTROL
INPUT
DATA
CIRCUIT
I/O7
,
CS
OE
WE
CONTROL
CIRCUIT
3089 drw 01
1
Jul.17.20