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6116 PDF预览

6116

更新时间: 2023-12-20 18:45:05
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
13页 221K
描述
5.0V 2K x 8 Asynchronous Static RAM

6116 数据手册

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CMOS Static RAM  
16K (2K x 8-Bit)  
6116SA  
6116LA  
Features  
Description  
High-speed access and chip select times  
TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganized  
as2Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOS  
technology.  
– Commercial:15/20/25ns(max.)  
– Industrial:20/25ns(max.)  
– Military:20/25/35/45/55/70/90/120/150ns(max.)  
Low-power consumption  
Battery backup operation  
– 2V data retention voltage (LA version only)  
Produced with advanced CMOS high-performance  
technology  
CMOS process virtually eliminates alpha particle soft-error Woperatingoffa2Vbattery.  
Access times as fast as 15ns are available. The circuit also offers a  
reduced power standby mode. When CS goes HIGH, the circuit will  
automaticallygoto,andremainin,astandbypowermode,aslongasCS  
remainsHIGH.Thiscapabilityprovidessignificantsystemlevelpowerand  
coolingsavings. Thelow-power(LA)versionalsooffersabatterybackup  
dataretentioncapabilitywherethecircuittypicallyconsumesonly1µWto  
rates  
AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully  
staticasynchronouscircuitryisused,requiringnoclocksorrefreshingfor  
operation.  
TheIDT6116SA/LAispackagedin24-pin300milplasticDIP,24-pin  
600miland300milceramicDIP,or24-leadgull-wingSOICprovidinghigh  
board-levelpackingdensities.  
Militarygradeproductismanufacturedincomplianceto MIL-STD-883,  
Class B, making it ideally suited to military temperature applications  
demandingthehighestlevelofperformanceandreliability.  
Input and output directly TTL-compatible  
Static operation: no clocks or refresh required  
Availableinceramic24-pinDIP,ceramicandplastic24-pinThin  
Dip and 24-pin SOIC  
Military product compliant to MIL-STD-833, Class B  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Green parts available, see ordering information  
FunctionalBlockDiagram  
A0  
CC  
V
128 X 128  
MEMORY  
ARRAY  
ADDRESS  
DECODER  
GND  
A10  
I/O0  
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
WE  
CONTROL  
CIRCUIT  
3089 drw 01  
1
Jul.17.20  

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