VS-60EPU06PbF, VS-60APU06PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
TO-247AC modified
TO-247AC
Cathode
to base
Cathode
to base
2
2
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
3
3
1
Anode
1
Anode
Cathode
Anode
VS-60EPU06PbF
VS-60APU06PbF
DESCRIPTION/APPLICATIONS
PRODUCT SUMMARY
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
TO-247AC,
TO-247AC modified (2 pins)
Package
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
IF(AV)
VR
60 A
600 V
VF at IF
1.68 V
trr typ.
See Recovery table
175 °C
TJ max.
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
MAX.
600
UNITS
Cathode to anode voltage
V
Continuous forward current
IF(AV)
TC = 116 °C
60
Single pulse forward current
IFSM
TC = 25 °C
600
A
Maximum repetitive forward current
Operating junction and storage temperatures
IFRM
Square wave, 20 kHz
120
TJ, TStg
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
600
-
-
IF = 60 A
-
-
-
-
-
-
1.35
1.20
1.11
-
1.68
1.42
1.30
50
V
Forward voltage
VF
IF = 60 A, TJ = 125 °C
IF = 60 A, TJ = 175 °C
VR = VR rated
Reverse leakage current
Junction capacitance
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 600 V
-
500
-
CT
39
Document Number: 94023
Revision: 14-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1