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60APU04-N3 PDF预览

60APU04-N3

更新时间: 2024-09-10 08:00:03
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
9页 206K
描述
Ultrafast Soft Recovery Diode, 60 A FRED Pt?

60APU04-N3 数据手册

 浏览型号60APU04-N3的Datasheet PDF文件第2页浏览型号60APU04-N3的Datasheet PDF文件第3页浏览型号60APU04-N3的Datasheet PDF文件第4页浏览型号60APU04-N3的Datasheet PDF文件第5页浏览型号60APU04-N3的Datasheet PDF文件第6页浏览型号60APU04-N3的Datasheet PDF文件第7页 
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Soft Recovery Diode, 60 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
TO-247AC modified  
TO-247AC  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according  
JEDEC-JESD47  
Cathode  
to base  
Cathode  
to base  
to  
2
2
• Halogen-free according to IEC 61249-2-21  
definition (-N3 only)  
BENEFITS  
3
3
1
Anode  
1
Anode  
• Reduced RFI and EMI  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
Cathode  
Anode  
VS-60EPU04PbF  
VS-60EPU04-N3  
VS-60APU04PbF  
VS-60APU04-N3  
PRODUCT SUMMARY  
TO-247AC,  
TO-247AC modified (2 pins)  
Package  
DESCRIPTION/APPLICATIONS  
IF(AV)  
VR  
60 A  
400 V  
These diodes are optimized to reduce losses and EMI/RFI in  
high frequency power conditioning systems.  
The softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for HF welding, power converters and other  
applications where switching losses are not significant  
portion of the total losses.  
VF at IF  
1.25 V  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
Diode variation  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
400  
UNITS  
Cathode to anode voltage  
V
Continuous forward current  
IF(AV)  
TC = 127 °C  
60  
Single pulse forward current  
IFSM  
TC = 25 °C  
600  
A
Maximum repetitive forward current  
Operating junction and storage temperatures  
IFRM  
Square wave, 20 kHz  
120  
TJ, TStg  
- 55 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 60 A  
400  
-
-
-
-
-
-
-
-
-
1.05  
0.87  
0.93  
-
1.25  
1.03  
1.10  
50  
2
V
Forward voltage  
VF  
IF = 60 A, TJ = 175 °C  
IF = 60 A, TJ = 125 °C  
VR = VR rated  
μA  
mA  
pF  
Reverse leakage current  
IR  
TJ = 150 °C, VR = VR rated  
VR = 400 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
50  
-
Measured lead to lead 5 mm from package body  
3.5  
-
nH  
Revision: 15-Aug-11  
Document Number: 94022  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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