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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 5P6SMA | NEC |
获取价格 |
P gate all Diffused mold type Thyristor granted 5 A on-state Average current, with rated V |
|
| 5P83904 | RENESAS |
获取价格 |
1.8 V to 3.3 V 1:4 Crystal Input to LVCMOS Output High-Performance Clock Fanout Buffer wit |
|
| 5P83904CMGK | IDT |
获取价格 |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer |
|
| 5P83904CMGK8 | IDT |
获取价格 |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer |
|
| 5P83904PGGK | IDT |
获取价格 |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer |
|
| 5P83904PGGK8 | IDT |
获取价格 |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer |
|
| 5P83905 | RENESAS |
获取价格 |
1.8 V to 3.3 V 1:6 Crystal Input to LVCMOS Output High-Performance Clock Fanout Buffer wit |
|
| 5P83905CMGK | IDT |
获取价格 |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer |
|
| 5P83905CMGK8 | IDT |
获取价格 |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer |
|
| 5P83905PGGK | IDT |
获取价格 |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer |
|
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
贸泽上架Tallysman TW5386智能GNSS天线
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