Datasheet > 5KP8.0A-HRA

5KP8.0A-HRA

更新时间： 2024-01-10 02:15:17

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网二极管
页数	文件大小	规格书
7页	1067K
描述
Trans Voltage Suppressor Diode, 5000W, 8V V(RWM), Unidirectional, 1 Element, Silicon,

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技术参数
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5KP8.0A-HRA 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	O-PALF-W2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.62	其他特性：	EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：	9.83 V	最小击穿电压：	8.89 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	最大非重复峰值反向功率耗散：	5000 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	8 W	参考标准：	IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压：	8 V	表面贴装：	NO
技术：	AVALANCHE	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

5KP8.0A-HRA 数据手册

TVS Diodes

Axial Leaded – 5000W > 5KP-HRA series

Pb e3

RoHS

5KP-HRA Series

Description

Uni-directional

The 5KP-HRA High Reliability Series is designed speciﬁcally

to protect sensitive electronic equipment from voltage

transients induced by lightning and other transient voltage

events.

Features

Bi-directional

• 5000W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Glass passivated chip

junction in P600 package

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

•Typical I_Rless than 2μA

when V_BRmin>12V

• High temperature

to reﬂow soldering

guaranteed: 260°C/10sec

/ 0.375”, (9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Lead-free matte tin plated

package

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

5000

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

JESD201A per its table 4a

and 4c

Steady State Power Dissipation on

Inﬁnite Heat Sink atT_L=75ºC

P_D

8.0

• Halogen free and RoHS

compliant

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 3)

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

I_FSM

400

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 175

°C

• Low incremental surge

resistance

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

8.0

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

Applications

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

TVS devices are ideal for the protection of I/O interfaces,

V_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

3. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

Functional Diagram

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 09/10/16

12 3 4 5 6 7

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