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5KP8.0A-HE3/54 PDF预览

5KP8.0A-HE3/54

更新时间: 2024-02-11 15:56:28
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 88K
描述
DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

5KP8.0A-HE3/54 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN
针数:2Reach Compliance Code:unknown
风险等级:5.65Base Number Matches:1

5KP8.0A-HE3/54 数据手册

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5KP5.0A thru 5KP188A  
Vishay General Semiconductor  
www.vishay.com  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• P600 glass passivated chip junction  
• Available in uni-directional polarity only  
• 5000 W peak pulse power capability with  
a 10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
P600  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
PRIMARY CHARACTERISTICS  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VWM  
PPPM  
PD  
5.0 V to 188 V  
5000 W  
8.0 W  
MECHANICAL DATA  
IFSM  
500 A  
Case: Molded epoxy body over passivated junction  
TJ max.  
175 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3  
- RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
5000  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (fig. 5)  
Instantaneous forward voltage at 100 A (2)  
See next table  
8.0  
A
PD  
W
IFSM  
600  
A
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 13-Mar-12  
Document Number: 88308  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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