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5KP30

更新时间: 2024-11-13 14:49:11
品牌 Logo 应用领域
WON-TOP 局域网IOT二极管
页数 文件大小 规格书
6页 97K
描述
Axial

5KP30 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.39Is Samacsys:N
最大击穿电压:42.2 V最小击穿电压:33.3 V
击穿电压标称值:37 V外壳连接:ISOLATED
最大钳位电压:53.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:8 W最大重复峰值反向电压:30 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

5KP30 数据手册

 浏览型号5KP30的Datasheet PDF文件第2页浏览型号5KP30的Datasheet PDF文件第3页浏览型号5KP30的Datasheet PDF文件第4页浏览型号5KP30的Datasheet PDF文件第5页浏览型号5KP30的Datasheet PDF文件第6页 
®
5KP SERIES  
5000W TRANSIENT VOLTAGE SUPPRESSOR  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
5000W Peak Pulse Power Dissipation  
5.0V – 440V Standoff Voltage  
Uni- and Bi-Directional Versions Available  
Excellent Clamping Voltage  
Typical Response Time < 1nS  
Plastic Case Material has UL Flammability  
Classification Rating 94V-0  
A
B
A
C
Mechanical Data  
D
Case: P-600, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band Except Bi-Directional  
Weight: 2.10 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 6  
P-600  
Dim  
A
Min  
25.4  
8.60  
1.20  
8.60  
Max  
B
9.10  
1.30  
9.10  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Peak Pulse Power Dissipation on 10/1000µS Waveform (Note 1, 2, 5)  
Peak Pulse Current on 10/1000µS Waveform (Note 1)  
Peak Forward Surge Current (Note 2, 3)  
PPPM  
IPPM  
IFSM  
VF  
5000  
See Table 1  
400  
W
A
A
Maximum Instantaneous Forward Voltage at 100A (Note 3, 4)  
Power Dissipation at TL = 75°C (Note 2)  
3.5 / 5.0  
8.0  
V
PD  
W
Typical Thermal Resistance, Junction to Ambient (Note 2)  
Typical Thermal Resistance, Junction to Lead (Note 2)  
RθJA  
RθJL  
40  
8.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Non-repetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 1.  
2. Mounted on 20 x 20 x 1.0mm thick copper pads to each terminal that maintained at a distance of 9.5mm from the case.  
3. Measured on 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum. For uni-directional devices only.  
4. VF < 3.5V for VBR 200V and VF < 5.0V for VBR 201V.  
5. Peak pulse power waveform is 10/1000µS.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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