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5962R9689104VYA PDF预览

5962R9689104VYA

更新时间: 2024-11-20 21:54:47
品牌 Logo 应用领域
艾法斯 - AEROFLEX 内存集成电路可编程只读存储器
页数 文件大小 规格书
11页 71K
描述
Radiation-Hardened 32K x 8 PROM

5962R9689104VYA 数据手册

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Standard Products  
UT28F256 Radiation-Hardened 32K x 8 PROM  
Data Sheet  
December 2002  
FEATURES  
q Programmable, read-only, asynchronous, radiation-  
-
Memory cell LET threshold: >128 MeV-cm2/mg  
q QML Q & V compliant part  
hardened, 32K x 8 memory  
-
Supported by industry standard programmer  
-
AC and DC testing at factory  
o
q 45ns and 40ns maximum address access time (-55 C to  
q Packaging options:  
o
+125 C)  
-
-
28-lead 50-mil center flatpack (0.490 x 0.74)  
28-lead 100-mil center DIP (0.600 x 1.4) - contact factory  
q TTL compatible input and TTL/CMOS compatible output  
levels  
q VDD: 5.0 volts + 10%  
q Three-state data bus  
q Standard Microcircuit Drawing 5962-96891  
q Low operating and standby current  
-
Operating: 125mA maximum @25MHz  
Derating: 3mA/MHz  
Standby: 2mA maximum (post-rad)  
·
PRODUCT DESCRIPTION  
-
q Radiation-hardened process and design; total dose  
The UT28F256 amorphous silicon anti-fuse PROM is a high  
performance, asynchronous, radiation-hardened,  
irradiation testing to MIL-STD-883, Method 1019  
32K x 8 programmable memory device. The UT28F256 PROM  
features fully asychronous operation requiring no external clocks  
or timing strobes. An advanced radiation-hardened twin-well  
CMOS process technology is used to implement the UT28F256.  
The combination of radiation-hardness, fast access time, and low  
power consumption make the UT28F256 ideal for high speed  
systems designed for operation in radiation environments.  
-
-
Total dose: 1E6 rad(Si)  
LETTH(0.25) ~ 100 MeV-cm2/mg  
-
SEL Immune >128 MeV-cm2/mg  
- Saturated Cross Section cm2 per bit, 1.0E-11  
- 1.2E-8 errors/device-day, Adams 90% geosynchronous  
heavy ion  
MEMORY  
ARRAY  
A(14:0)  
DECODER  
SENSE AMPLIFIER  
CE  
CONTROL  
LOGIC  
PE  
OE  
DQ(7:0)  
PROGRAMMING  
Figure 1. PROM Block Diagram  

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