Datasheet > 5962R9689104VXA

5962R9689104VXA

更新时间： 2024-10-28 22:15:07

品牌	Logo	应用领域
艾法斯 - AEROFLEX		内存集成电路 LORA 可编程只读存储器
页数	文件大小	规格书
11页	71K
描述
Radiation-Hardened 32K x 8 PROM

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5962R9689104VXA 数据手册

Standard Products

UT28F256 Radiation-Hardened 32K x 8 PROM

Data Sheet

December 2002

FEATURES

q Programmable, read-only, asynchronous, radiation-

Memory cell LET threshold: >128 MeV-cm²/mg

q QML Q & V compliant part

hardened, 32K x 8 memory

Supported by industry standard programmer

AC and DC testing at factory

q 45ns and 40ns maximum address access time (-55 C to

q Packaging options:

+125 C)

28-lead 50-mil center flatpack (0.490 x 0.74)

28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

q TTL compatible input and TTL/CMOS compatible output

levels

q V_DD: 5.0 volts + 10%

q Three-state data bus

q Standard Microcircuit Drawing 5962-96891

q Low operating and standby current

Operating: 125mA maximum @25MHz

Derating: 3mA/MHz

Standby: 2mA maximum (post-rad)

PRODUCT DESCRIPTION

q Radiation-hardened process and design; total dose

The UT28F256 amorphous silicon anti-fuse PROM is a high

performance, asynchronous, radiation-hardened,

irradiation testing to MIL-STD-883, Method 1019

32K x 8 programmable memory device. The UT28F256 PROM

features fully asychronous operation requiring no external clocks

or timing strobes. An advanced radiation-hardened twin-well

CMOS process technology is used to implement the UT28F256.

The combination of radiation-hardness, fast access time, and low

power consumption make the UT28F256 ideal for high speed

systems designed for operation in radiation environments.

Total dose: 1E6 rad(Si)

LET_TH(0.25) ~ 100 MeV-cm²/mg

SEL Immune >128 MeV-cm²/mg

- Saturated Cross Section cm²per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous

heavy ion

MEMORY

ARRAY

A(14:0)

DECODER

SENSE AMPLIFIER

CONTROL

LOGIC

DQ(7:0)

PROGRAMMING

Figure 1. PROM Block Diagram

12 3 4 5 6 7...11

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