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5962-9561328H9A PDF预览

5962-9561328H9A

更新时间: 2024-11-08 03:42:27
品牌 Logo 应用领域
MICROSS 静态存储器
页数 文件大小 规格书
17页 135K
描述
Standard SRAM, 512KX8, 12ns, CMOS, CDFP32, CERAMIC, DFP-32

5962-9561328H9A 数据手册

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SRAM  
AS5C4008  
512K x 8 SRAM  
PIN ASSIGNMENT  
(Top View)  
SRAM MEMORY ARRAY  
AVAILABLE AS MILITARY  
32-Pin DIP (CW), 32-Pin LCC (EC)  
32-Pin SOJ (ECJ)  
SPECIFICATION  
• SMD 5962-95600  
• SMD 5962-95613  
• MIL STD-883  
1
2
A18  
A16  
A14  
A12  
A7  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
Vcc  
A15  
A17  
WE\  
A13  
A8  
3
4
FEATURES  
5
• High Speed: 12, 15, 17, 20, 25, 35 and 45ns  
• High-performance, low power military grade device  
• Single +5V ±10% power supply  
6
A6  
7
A5  
A9  
8
A4  
A11  
OE\  
A10  
CE\  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
9
A3  
• Easy memory expansion with CE\ and OE\ options  
• All inputs and outputs are TTL-compatible  
• Ease of upgradability from 1 Meg using the 32 pin  
evolutionary version.  
10  
11  
12  
13  
14  
15  
16  
A2  
A1  
A0  
I/O0  
I/O1  
I/O2  
Vss  
OPTIONS  
Timing  
MARKING  
12ns access  
15ns access  
17ns access  
20ns access  
25ns access  
35ns access  
45ns access  
-12  
-15  
-17  
-20  
-25  
-35  
-45  
32-Pin Flat Pack (F)  
Vcc  
A15  
A17  
WE\  
A13  
A8  
1
A18  
A16  
A14  
A12  
A7  
32  
2
31  
3
30  
4
29  
5
28  
6
A6  
27  
Operating Temperature Range  
Military: -55oC to +125oC  
Industrial: -40oC to +85oC  
Packages  
A9  
7
A5  
26  
XT  
IT  
A11  
OE\  
A10  
CE\  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
8
A4  
25  
9
A3  
24  
10  
11  
12  
13  
14  
15  
16  
A2  
23  
22  
21  
20  
19  
18  
17  
A1  
Ceramic Dip (600 mil)  
Ceramic Flatpack  
Ceramic LCC  
Ceramic SOJ  
• Options  
CW  
F
EC  
ECJ  
No. 112  
No. 304  
No. 209  
No. 502  
A0  
I/O0  
I/O1  
I/O2  
Vss  
2V data retention/ low power  
L
NOTE: Not all combinations of operating temperature, speed, data retention and  
low power are necessarily available. Please contact factory for availability of specic  
part number combinations.  
GENERAL DESCRIPTION  
For more products and information  
please visit our web site at  
www.micross.com  
The AS5C4008 is a 4 megabit monolithic CMOS SRAM, orga-  
nized as a 512K x 8.  
The evolutionary 32 pin device allows for easy upgrades from  
the 1 meg SRAM.  
For exibility in high-speed memory applications, Micross of-  
fers chip enable (CE\) and output enable (OE\) capabilities. These  
enhancements can place the outputs in High-Z for additional exibility  
in system design.  
Writing to these devices is accomplished when write enable  
(WE\) and CE\ inputs are both LOW. Reading is accomplished when  
WE\ remains HIGH and CE\ and OE\ go LOW. This allows systems  
designers to meet low standby power requirements.  
All devices operate from a single +5V power supply and all inputs  
are fully TTL-Compatible.  
Micross Components reserves the right to change products or specications without notice.  
AS5C4008  
Rev. 6.4 01/10  
1

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