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5962-9560601QRA PDF预览

5962-9560601QRA

更新时间: 2024-11-21 11:07:59
品牌 Logo 应用领域
德州仪器 - TI 驱动总线驱动器总线收发器
页数 文件大小 规格书
8页 124K
描述
具有三态输出的八路收发器和线路/MOS 驱动器 | J | 20 | -55 to 125

5962-9560601QRA 数据手册

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SN54ABT2245, SN74ABT2245  
OCTAL TRANSCEIVERS AND LINE/MOS DRIVERS  
WITH 3-STATE OUTPUTS  
SCBS234D – SEPTEMBER 1992 – REVISED MAY 1997  
SN54ABT2245 . . . J OR W PACKAGE  
SN74ABT2245 . . . DB, DW, N, OR PW PACKAGE  
(TOP VIEW)  
B-Port Outputs Have Equivalent 25-Ω  
Series Resistors, So No External Resistors  
Are Required  
State-of-the-Art EPIC-ΙΙB BiCMOS Design  
Significantly Reduces Power Dissipation  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
DIR  
A1  
V
CC  
OE  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
Latch-Up Performance Exceeds 500 mA Per  
JEDEC Standard JESD-17  
A2  
A3  
A4  
ESD Protection Exceeds 2000 V Per  
MIL-STD-833, Method 3015; Exceeds 200 V  
Using Machine Model (C = 200 pF, R = 0)  
A5  
A6  
A7  
Typical V  
(Output Ground Bounce) < 1 V  
OLP  
A8  
at V  
= 5 V, T = 25°C  
CC  
A
GND  
High-Impedance State During Power Up  
and Power Down  
SN54ABT2245 . . . FK PACKAGE  
(TOP VIEW)  
Package Options Include Plastic  
Small-Outline (DW), Shrink Small-Outline  
(DB), and Thin Shrink Small-Outline (PW)  
Packages, Ceramic Chip Carriers (FK),  
Plastic (N) and Ceramic (J) DIPs, and  
Ceramic Flat (W) Package  
3
2
1 20 19  
18  
A3  
A4  
A5  
A6  
A7  
4
5
6
7
8
B1  
B2  
B3  
B4  
B5  
17  
16  
15  
14  
description  
These octal transceivers and line drivers are  
designed for asynchronous communication  
between data buses. The devices transmit data  
from the A bus to the B bus or from the B bus to  
the A bus, depending on the logic level at the  
direction-control (DIR) input. The output-enable  
(OE) input can be used to disable the device so  
the buses are effectively isolated.  
9 10 11 12 13  
The B-port outputs, which are designed to sink up to 12 mA, include equivalent 25-series resistors to reduce  
overshoot and undershoot.  
When V  
is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down.  
CC  
However, to ensure the high-impedance state above 2.1 V, OE should be tied to V  
the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.  
through a pullup resistor;  
CC  
The SN54ABT2245 is characterized for operation over the full military temperature range of –55°C to 125°C.  
The SN74ABT2245 is characterized for operation from –40°C to 85°C.  
FUNCTION TABLE  
INPUTS  
OPERATION  
OE  
L
DIR  
L
B data to A bus  
A data to B bus  
Isolation  
L
H
H
X
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC-ΙΙB is a trademark of Texas Instruments Incorporated.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

5962-9560601QRA 替代型号

型号 品牌 替代类型 描述 数据表
SNJ54ABT2245J TI

完全替代

具有三态输出的八路收发器和线路/MOS 驱动器 | J | 20 | -55 to 125
SN74ABT2245N TI

类似代替

OCTAL TRANSCEIVERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS

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Field Programmable Gate Array, 144 CLBs, 2000 Gates, 188MHz, 144-Cell, CMOS, CPGA132, CERA