生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP-8 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 5.42 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.0008 µA | 25C 时的最大偏置电流 (IIB): | 0.0005 µA |
最小共模抑制比: | 70 dB | 标称共模抑制比: | 83 dB |
频率补偿: | YES | 最大输入失调电流 (IIO): | 0.0008 µA |
最大输入失调电压: | 2500 µV | JESD-30 代码: | R-GDIP-T8 |
长度: | 9.58 mm | 低-偏置: | YES |
低-失调: | NO | 微功率: | YES |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 包装方法: | TUBE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 功率: | NO |
电源: | 2.7/8 V | 可编程功率: | NO |
认证状态: | Qualified | 筛选级别: | MIL-PRF-38535 Class Q |
座面最大高度: | 5.08 mm | 最小摆率: | 0.25 V/us |
标称压摆率: | 0.55 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.5 mA | 供电电压上限: | 16 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 710 kHz | 最小电压增益: | 25000 |
宽带: | NO | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
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