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5962-9207802HYX PDF预览

5962-9207802HYX

更新时间: 2024-09-24 20:00:15
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
20页 159K
描述
SRAM Module, 512KX8, 100ns, CMOS, GULL WING, DIP-32

5962-9207802HYX 数据手册

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REVISIONS  
LTR  
DESCRIPTION  
DATE (YR-MO-DA)  
APPROVED  
A
B
C
D
E
F
Changes in accordance with NOR 5962-R109-94.  
Add case outline Y.  
94-01-25  
94-09-02  
95-07-19  
96-12-16  
97-02-24  
98-06-23  
K. A. Cottongim  
K. A. Cottongim  
K. A. Cottongim  
K. A. Cottongim  
K. A. Cottongim  
K. A. Cottongim  
Added device type 09. Made changes to table I.  
Changes in accordance with NOR 5962-R153-97.  
Add case outline T.  
Table I; Changed the max limit for ICC for device types 06 trough 09  
from 200 mA to 210 mA. Changes the max limit for ICCDR for device  
types 06 through 09 from 10.4 mA to 12.8 mA. -sld  
G
H
Added note to paragraph 1.2.2 and table I to regarding the 4  
transistor design. Added thermal resistance ratings for all case  
outlines to paragraph 1.3. Editorial changes throughout. -sld  
00-07-03  
01-04-09  
Raymond Monnin  
Raymond Monnin  
Table I, tOH, change minimum limit for device types 01 through 03  
from 15 ns to 5 ns.  
REV  
SHEET  
REV  
H
H
H
H
SHEET  
15  
16  
17  
18  
REV STATUS  
OF SHEETS  
REV  
SHEET  
H
1
H
2
H
3
H
4
H
5
H
6
H
7
H
8
H
9
H
H
H
H
H
10  
11  
12  
13  
14  
PMIC N/A  
PREPARED BY  
Steve L. Duncan  
DEFENSE SUPPLY CENTER COLUMBUS  
POST OFFICE BOX 3990  
STANDARD  
MICROCIRCUIT  
DRAWING  
CHECKED BY  
Michael C. Jones  
COLUMBUS, OHIO 43216-5000  
http://www.dscc.dla.mil  
APPROVED BY  
Kendall A. Cottongim  
THIS DRAWING IS  
AVAILABLE  
FOR USE BY ALL  
DEPARTMENTS  
MICROCIRCUIT, HYBRID, MEMORY,  
DIGITAL, STATIC RANDOM ACCESS  
MEMORY, CMOS, 512K x 8-BIT  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
DRAWING APPROVAL DATE  
93-01-25  
AMSC N/A  
REVISION LEVEL  
H
SIZE  
A
CAGE CODE  
5962-92078  
67268  
SHEET  
1 OF 18  
DSCC FORM 2233  
APR 97  
5962-E329-01  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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