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5962-9081201MGA PDF预览

5962-9081201MGA

更新时间: 2024-11-20 14:46:47
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器
页数 文件大小 规格书
10页 285K
描述
IC BUFFER AMPLIFIER, MBCY8, METAL CAN-8, Buffer Amplifier

5962-9081201MGA 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:BCY包装说明:METAL CAN-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5Is Samacsys:N
放大器类型:BUFFER最大平均偏置电流 (IIB):7 µA
标称带宽 (3dB):50 MHz25C 时的最大偏置电流 (IIB):4 µA
最大输入失调电压:50000 µVJESD-30 代码:O-MBCY-W8
JESD-609代码:e0负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:METAL
封装等效代码:CAN8,.2封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-15 V认证状态:Not Qualified
筛选级别:MIL-STD-883最小摆率:250 V/us
标称压摆率:1200 V/us子类别:Buffer Amplifiers
最大压摆率:20 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb) - hot dipped端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

5962-9081201MGA 数据手册

 浏览型号5962-9081201MGA的Datasheet PDF文件第2页浏览型号5962-9081201MGA的Datasheet PDF文件第3页浏览型号5962-9081201MGA的Datasheet PDF文件第4页浏览型号5962-9081201MGA的Datasheet PDF文件第5页浏览型号5962-9081201MGA的Datasheet PDF文件第6页浏览型号5962-9081201MGA的Datasheet PDF文件第7页 
May 1998  
LM6121/LM6221/LM6321  
High Speed Buffer  
General Description  
Features  
n High slew rate: 800 V/µs  
n Wide bandwidth: 50 MHz  
n Slew rate and bandwidth 100% tested  
These high speed unity gain buffers slew at 800 V/µs and  
have a small signal bandwidth of 50 MHz while driving a 50  
±
load. They can drive 300 mA peak and do not oscillate  
while driving large capacitive loads. The LM6121 family are  
monolithic ICs which offer performance similar to the  
LH0002 with the additional features of current limit and ther-  
mal shutdown.  
±
n Peak output current:  
300 mA  
n High input impedance: 5 MΩ  
n LH0002H pin compatible  
n No oscillations with capacitive loads  
n 5V to 15V operation guaranteed  
n Current and thermal limiting  
These buffers are built with National’s VIP (Vertically Inte-  
±
grated PNP) process which provides fast PNP transistors  
that are true complements to the already fast NPN devices.  
This advanced junction-isolated process delivers high speed  
performance without the need for complex and expensive di-  
electric isolation.  
n Fully specified to drive 50lines  
Applications  
n Line Driving  
n Radar  
n Sonar  
Simplified Schematic  
DS009223-1  
Numbers in ( ) are for 8-pin N DIP.  
VIP is a trademark of National Semiconductor Corporation.  
© 1999 National Semiconductor Corporation  
DS009223  
www.national.com  

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