是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | CERAMIC, DIP-14 | 针数: | 14 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 1 week |
风险等级: | 5.16 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.03 µA | 25C 时的最大偏置电流 (IIB): | 0.04 µA |
标称共模抑制比: | 82 dB | 频率补偿: | YES |
最大输入失调电压: | 8000 µV | JESD-30 代码: | R-CDIP-T14 |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 负供电电压上限: | -19 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 4 |
端子数量: | 14 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装等效代码: | DIP14,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | +-5/+-15 V |
认证状态: | Not Qualified | 筛选级别: | MIL-STD-883 |
座面最大高度: | 5.08 mm | 最小摆率: | 1.8 V/us |
标称压摆率: | 3.4 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 1.5 mA | 供电电压上限: | 19 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | BIFET | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 1300 kHz | 最小电压增益: | 500 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
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Power Supply Support Circuit, Adjustable, 1 Channel, CMOS, CDIP8, CERAMIC, DIP-8 |