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5962-8959847QZC PDF预览

5962-8959847QZC

更新时间: 2024-02-01 08:38:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 静态存储器内存集成电路
页数 文件大小 规格书
16页 878K
描述
Standard SRAM, 128KX8, 30ns, CMOS, CDIP32

5962-8959847QZC 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP, DIP32,.4Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.46最长访问时间:30 ns
I/O 类型:COMMONJESD-30 代码:R-CDIP-T32
JESD-609代码:e4长度:40.64 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装等效代码:DIP32,.4封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
电源:5 V认证状态:Qualified
筛选级别:MIL-PRF-38535 Class Q座面最大高度:4.32 mm
最小待机电流:4.5 V子类别:SRAMs
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:GOLD端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

5962-8959847QZC 数据手册

 浏览型号5962-8959847QZC的Datasheet PDF文件第2页浏览型号5962-8959847QZC的Datasheet PDF文件第3页浏览型号5962-8959847QZC的Datasheet PDF文件第4页浏览型号5962-8959847QZC的Datasheet PDF文件第5页浏览型号5962-8959847QZC的Datasheet PDF文件第6页浏览型号5962-8959847QZC的Datasheet PDF文件第7页 
Features  
Operating Voltage: 5V  
Access Time: 30, 45 ns  
Very Low Power Consumption  
Active: 600 mW (Max)  
Standby: 1 µW (Typ)  
Wide Temperature Range: -55C to +125C  
400 Mils Width Packages: FP32 and SB32  
TTL Compatible Inputs and Outputs  
Asynchronous  
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2@125°C  
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019  
QML Q and V with SMD 5962-89598  
ESCC with Specification 9301/047  
Rad. Tolerant  
128Kx8, 5-Volt  
Very Low Power  
CMOS SRAM  
Description  
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.  
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an  
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time  
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-  
vides excellent protection against soft errors due to noise.  
M65608E  
The M65608E is processed according to the methods of the latest revision of the MIL  
PRF 38535 or ESCC 9000.  
4151P–AERO–11/12  

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