71256S
71256L
CMOS Static RAM
256K (32K x 8-Bit)
Features
Description
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High-speed address/chip select time
TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas
32K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
– Commercial:20/25/35ns(max.)
– Industrial:20/25/35ns(max.)
– Military:25/35/45/55/70/85/100ns(max.)
Low-power operation
Battery Backup operation – 2V data retention
Produced with advanced high-performance CMOS
Address access times as fast as 20ns are available with power
consumptionofonly350mW(typ.).Thecircuitalsooffersareducedpower
standbymode.WhenCSgoesHIGH,thecircuitwillautomaticallygotoand
remainin,alow-powerstandbymodeaslongasCSremainsHIGH. This
capabilityprovidessignificantsystemlevelpowerandcoolingsavings.
The low-power (L) version also offers a battery backup data retention
capabilitywherethecircuittypicallyconsumesonly5μWwhenoperating
offa2Vbattery.
TheIDT71256ispackagedina28-pin(300or600mil)ceramicDIP,
a 28-pin 300 mil SOJ providing high board level packing densities.
TheIDT71256militaryRAMismanufacturedincompliancewiththe
latestrevisionofMIL-STD-883,ClassB,makingitideallysuitedtomilitary
temperatureapplicationsdemandingthehighestlevelofperformanceand
reliability.
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technology
Input and output directly TTL-compatible
Available in standard 28-pin (300 or 600 mil) ceramic DIP,
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28-pin (300 mil) SOJ
Military product compliant to MIL-STD-883, Class B
Industrial temperature range (–40°C to +85°C) is available
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for selected speeds
Green parts available, see ordering information
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FunctionalBlockDiagram
A0
VCC
GND
262,144 BIT
MEMORY ARRAY
ADDRESS
DECODER
A14
I/O
0
I/O CONTROL
INPUT
DATA
CIRCUIT
I/O7
,
CS
OE
CONTROL
CIRCUIT
2946 drw 01
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1
Aug.06.20