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5962-88662 PDF预览

5962-88662

更新时间: 2023-12-20 18:44:45
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
12页 352K
描述
5.0V 32K x 8 Asynchronous Static RAM

5962-88662 数据手册

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71256S  
71256L  
CMOS Static RAM  
256K (32K x 8-Bit)  
Features  
Description  
High-speed address/chip select time  
TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas  
32K x 8. It is fabricated using high-performance, high-reliability CMOS  
technology.  
– Commercial:20/25/35ns(max.)  
– Industrial:20/25/35ns(max.)  
– Military:25/35/45/55/70/85/100ns(max.)  
Low-power operation  
Battery Backup operation – 2V data retention  
Produced with advanced high-performance CMOS  
Address access times as fast as 20ns are available with power  
consumptionofonly350mW(typ.).Thecircuitalsooffersareducedpower  
standbymode.WhenCSgoesHIGH,thecircuitwillautomaticallygotoand  
remainin,alow-powerstandbymodeaslongasCSremainsHIGH. This  
capabilityprovidessignificantsystemlevelpowerandcoolingsavings.  
The low-power (L) version also offers a battery backup data retention  
capabilitywherethecircuittypicallyconsumesonly5μWwhenoperating  
offa2Vbattery.  
TheIDT71256ispackagedina28-pin(300or600mil)ceramicDIP,  
a 28-pin 300 mil SOJ providing high board level packing densities.  
TheIDT71256militaryRAMismanufacturedincompliancewiththe  
latestrevisionofMIL-STD-883,ClassB,makingitideallysuitedtomilitary  
temperatureapplicationsdemandingthehighestlevelofperformanceand  
reliability.  
technology  
Input and output directly TTL-compatible  
Available in standard 28-pin (300 or 600 mil) ceramic DIP,  
28-pin (300 mil) SOJ  
Military product compliant to MIL-STD-883, Class B  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Green parts available, see ordering information  
FunctionalBlockDiagram  
A0  
VCC  
GND  
262,144 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A14  
I/O  
0
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
CONTROL  
CIRCUIT  
2946 drw 01  
WE  
1
Aug.06.20  

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