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5962-3826718QUX PDF预览

5962-3826718QUX

更新时间: 2024-11-13 14:46:47
品牌 Logo 应用领域
MICROSS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
19页 329K
描述
EEPROM, 128KX8, 150ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32

5962-3826718QUX 数据手册

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EEPROM  
AS58C1001  
Austin Semiconductor, Inc.  
128K x 8 EEPROM  
EEPROM Memory  
AVAILABLE AS MILITARY  
PIN ASSIGNMENT  
(Top View)  
32-Pin CFP (F & SF)  
SPECIFICATIONS  
l SMD 5962-38267  
l MIL-STD-883  
1
2
3
4
5
6
7
8
RDY/BUSY\  
A16  
A14  
A12  
A7  
32 Vcc  
31 A15  
30 RES\  
29 WE\  
28 A13  
27 A8  
FEATURES  
l High speed: 150, 200, and 250ns  
l Data Retention: 10 Years  
l Low power dissipation, active current (20mW/MHz (TYP)),  
standby current (100µW(MAX))  
l Single +5V (+10%) power supply  
l Data Polling and Ready/Busy Signals  
l Erase/Write Endurance (10,000 cycles in a page mode)  
l Software Data protection Algorithm  
l Data Protection Circuitry during power on/off  
l Hardware Data Protection with RES pin  
l Automatic Programming:  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
I/O 0  
I/O 1  
I/O 2  
Vss  
26 A9  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 I/O 7  
20 I/O 6  
19 I/O 5  
18 I/O 4  
17 I/O 3  
9
10  
11  
12  
13  
14  
15  
16  
32-Pin LCC (ECA)  
Automatic Page Write: 10ms (MAX)  
128 Byte page size  
OPTIONS  
l Timing  
MARKINGS  
4
3 2 1 31 32 30  
150ns access  
200ns access  
250ns access  
-15  
-20  
-25  
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 WE\  
28 A13  
27 A8  
26 A9  
l Packages  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 I/O 7  
Ceramic LCC  
Ceramic Flat Pack  
Radiation Shielded Ceramic FP*  
l Operating Temperature Ranges  
-Military (-55oC to +125oC)  
-Industrial (-40oC to +85oC)  
ECA No. 208  
No. 306  
A2 10  
A1 11  
F
A0 12  
SF No. 305  
I/O 0 13  
XT  
IT  
14 15 16 17 18 19 20  
*NOTE: Package lid is connected to ground (Vss).  
This EEPROM provides several levels of data protection. Hard-  
ware data protection is provided with the RES pin, in addition to noise  
protection on the WE signal and write inhibit during power on and off.  
Software data protection is implemented using JEDEC Optional Stan-  
dard algorithm.  
The AS58C1001 is designed for high reliability in the most de-  
manding applications. Data retention is specified for 10 years and  
erase/write endurance is guaranteed to a minimum of 10,000 cycles in  
the Page Mode.  
GENERAL DESCRIPTION  
The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS  
Electrically Erasable Programmable Read Only Memory (EEPROM)  
organized as 131, 072 x 8 bits. The AS58C1001 is capable or in  
system electrical Byte and Page reprogrammability.  
The AS58C1001 achieves high speed access, low power consump-  
tion, and a high level of reliability by employing advanced MNOS  
memory technology and CMOS process and circuitry technology and  
CMOS process and circuitry technology.  
This device has a 128-Byte Page Programming function to make its  
erase and write operations faster. The AS58C1001 features Data  
Polling and a Ready/Busy signal to indicate completion of erase and  
programming operations.  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS58C1001  
Rev. 2.5 6/00  
1

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