Datasheet > 55PTxxH

55PTxxH

更新时间： 2024-11-25 01:01:31

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
5页	652K
描述
Stansard SCRs, 55A

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55PTxxH 数据手册

RoHS

55PT Series _RoHS

SEMICONDUCTOR

Stansard SCRs, 55A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1600

TO-220AB (non-Insulated)

(55PTxxA)

TO-220AB (lnsulated)

(55PTxxAI)

DESCRIPTION

The 55PT series of silicon controlled rectifiers are

high performance glass passivated technology,

and are suitable for general purpose applications,

where power handling and power dissipation are

critical, such as solid state relay, welding equipment

and high power motor control.

TO-3P (non-Insulated)

TO-3P (Insulated)

(55PTxxB)

(55PTxxBI)

Base on a clip assembly technology, they offer a

superior performance in surge current capabilities.

Thanks to their internal ceramic pad, they provide

high voltage insulation(2500V_RMS).

2(A)

1(K)

TO-263 (D²PAK)

(55PTxxH)

TO-247AB (non-Insulated)

3(G)

(55PTxxC)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

T_c=85°C

TO-3P/TO-247AB

RMS on-state current full sine wave

I_T(RMS)

T_c=80°C

T_c=70°C

T_c=85°C

T_c=80°C

T_c=70°C

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

TO-3P/TO-247AB

(180° conduction angle )

Average on-state current

(180° conduction angle)

I_T(AV)

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

F =50 Hz

t = 20 ms

520

540

Non repetitive surge peak on-state

I_TSM

I²t

current (full cycle, T initial = 25°C)

F =60 Hz

t = 16.7 ms

I²t Value for fusing

A²s

t_p= 10 ms

1352

Critical rate of rise of on-state current

V_D= 67% V_DRM, t_p= 200μs, I_G= 0.3A

d_IG/dt = 0.3A/μs

T_j= 125ºC

A/µs

dI/dt

F = 60 Hz

150

T_p= 20 µs

T_p=20µs

T_j=125ºC

T_j= 125ºC

Peak gate current

I_GM

P_GM

P_G(AV)

V_DRM

Maximum gate power

Average gate power dissipation

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Storage temperature range

Operating junction temperature range

T_j=125ºC

600 to 1600

V_RRM

T_stg

T_j

- 40 to + 150

- 40 to + 125

ºC

Maximum peak reverse gate voltage V_RGM

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