Datasheet > 544A4

544A4

更新时间： 2024-01-29 15:37:55

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
2页	35K
描述
Infrared Emitting Diodes (IRED)

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544A4 数据手册

GaAs HIGH POWER T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-544A4

Description

Package Dimensions

Unit: mm(inch)

f 5.05

The MIE-544A4 is an infrared emitting diode utilizing

GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

(.199)

5.47

(.215)

7.62

(.300)

5.90

(.230)

1.00

(.039)

SEE NOTE 2

FLAT DENOTES CATHODE

Features

23.40 MIN.

(.921)

l High radiant power and high radiant intesity

l Suitable for DC and high pulse current operation

0.50 TYP.

(.020)

l Standard T-1 3/4 ( f 5mm) package, radiant angle : 40°

1.00MIN.

(.039)

l Peak wavelength l _P=940 nm

2.54 NOM.

(.100)

l Good spectral matching to si-photodetecto

SEE NOTE 3

Notes :

1. Tolerance is ±0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

100

Peak Forward Current

Continuous Forward Current

Reverse Voltage

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/17/2000

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