Datasheet > 524V48

524V48

更新时间： 2024-11-04 01:18:39

品牌	Logo	应用领域
NTE		/
页数	文件大小	规格书
3页	67K
描述
High Transient Current Capability

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

524V48 数据手册

NTE1V010 thru NTE1V300

NTE2V010 thru NTEV480

NTE524V13 thru NTE524V48

Metal Oxide Varistors (MOV)

Description:

The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high

transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage

conditions, permitting low standby drain currents.

The NTE 1V Series Varistors have a non−linear voltage/current characteristic as expressed by the relationship:

I = KV

Where I = The current in amperes

V = The voltage

K = A constant

n = A constant which shows the dependence of

the voltage V upon the current I. It is called

the voltage−dependant index

Features:

High Transient Current Capability − up to 6500A

Fast Response Time − less than 35ns

Excellent Voltage Clamping Characteristics

Very Low Temperature Coefficient

Low Standby Current

High Energy Capability

The Value for “n” is Greater

Very Low Leakage Current

Low Capacitance

Low Overshoot Characteristics

Electrical Ratings:

Varistor Voltage

The voltage across the varistor at a DC current of 1.0mA.

Energy

The maximum electrical energy which can be dissipated within the varistor by a single impulse of 10 x 1000s current

waveform with continuous voltage applied. Energy ratings are based on a shift of varistor voltage of less than 10% of the

initial value. The unit is expressed in joules.

Peak Current

The maximum current allowable for a single pulse of 8 x 20s exponential waveform.

Operating Ambient Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +85C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +125C

Response Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . less than 35ns

Voltage Temperature Coefficient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . less than 0.05%/C

Non−Linear Exponent

NTE1V010 to NTE1V075, NTE2V010 to NTE2V075 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 to 50

NTE1V095 to NTE1V300, NTE2V095 to NTE2V480, NTE524V13 to NTE542V48 . . . . . . . . . . greater than 40

Maximum Leakage Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Rev. 10−14

12 3

中文翻译

下载PDF

与524V48相关器件

型号	品牌	获取价格	描述	数据表
524VABFREQ-OUT2	CTS	获取价格	Clipped Sine Output Oscillator, 10MHz Min, 20MHz Max, MINIATURE, DIP-4
524VABM	CTS	获取价格	Micro Peripheral IC
524VACFREQ-OUT2	CTS	获取价格	Clipped Sine Output Oscillator, 10MHz Min, 20MHz Max, MINIATURE, DIP-4
524VADFREQ-OUT2	CTS	获取价格	Clipped Sine Output Oscillator, 10MHz Min, 20MHz Max, MINIATURE, DIP-4
524VAEFREQ-OUT2	CTS	获取价格	Clipped Sine Output Oscillator, 10MHz Min, 20MHz Max, MINIATURE, DIP-4
524VAEM	CTS	获取价格	Micro Peripheral IC
524VBBFREQ-OUT2	CTS	获取价格	Clipped Sine Output Oscillator, 10MHz Min, 20MHz Max, MINIATURE, DIP-4
524VBBM	CTS	获取价格	Micro Peripheral IC
524VBCFREQ-OUT2	CTS	获取价格	Clipped Sine Output Oscillator, 10MHz Min, 20MHz Max, MINIATURE, DIP-4
524VBCM	CTS	获取价格	Micro Peripheral IC

与524V48相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

5
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

28
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

27

产品中心

服务支持

精选活动

关于我们

帮助中心

524V48

524V48 数据手册

与524V48相关器件

与524V48相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

524V48

524V48 数据手册

与524V48相关器件

与524V48相关文章

您还可以找

您在本页遇到什么问题？