HMC512LP5 / 512LP5E
v05.0811
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 9.6 - 10.8 GHz
Typical Applications
Features
Triple Output: Fo = 9.6 - 10.8 GHz
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
Fo/2 = 4.8 - 5.4 GHz
Fo/4 = 2.4 - 2.7 GHz
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
Pout: +9 dBm
Phase Noise: -110 dBc/Hz @100 kHz Typ.
No External Resonator Needed
• Military End-Use
32 Lead 5 x 5 mm SMT Package: 25 mm²
Functional Diagram
General Description
The HMC512LP5 & HMC512LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
The HMC512LP5 & HMC512LP5E integrate resona-
tors, negative resistance devices, varactor diodes
and feature half frequency and divide-by-4 outputs.
The VCO’s phase noise performance is excellent over
temperature, shock, and process due to the oscilla-
tor’s monolithic structure. Power output is +9 dBm
typical from a +5V supply voltage. The prescaler and
RF/2 functions can be disabled to conserve current if
not required. The voltage controlled oscillator is pack-
aged in a leadless QFN 5x5 mm surface mount pack-
age, and requires no external matching components.
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Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter
Min.
Typ.
Max.
Units
Fo
Fo/2
9.6 - 10.8
4.8 - 5.4
GHz
GHz
Frequency Range
Power Output
RFOUT
RFOUT/2
RFOUT/4
+3
+6
-8
+15
+14
-3
dBm
dBm
dBm
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
-110
dBc/Hz
Tune Voltage
Vtune
2
13
370
10
V
Supply Current
Icc(Dig) + Icc(Amp) + Icc(RF)
250
330
3
mA
µA
dB
Tune Port Leakage Current (Vtune= 12V)
Output Return Loss
Harmonics/Subharmonics
1/2
2nd
3rd
33
25
35
dBc
dBc
dBc
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
5
MHz pp
MHz/V
MHz/°C
30
1.2
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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