是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-65 |
包装说明: | POST/STUD MOUNT, O-MUPM-D2 | 针数: | 2 |
Reach Compliance Code: | compliant | HTS代码: | 8541.30.00.80 |
风险等级: | 5.11 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 标称电路换相断开时间: | 110 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 200 V/us |
最大直流栅极触发电流: | 100 mA | 最大直流栅极触发电压: | 2.5 V |
最大维持电流: | 200 mA | JEDEC-95代码: | TO-208AC |
JESD-30 代码: | O-MUPM-D2 | 最大漏电流: | 15 mA |
通态非重复峰值电流: | 1250 A | 元件数量: | 1 |
端子数量: | 2 | 最大通态电流: | 50000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大均方根通态电流: | 80 A |
断态重复峰值电压: | 1000 V | 重复峰值反向电压: | 1000 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
50RIA100MPBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 80A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AC | |
50RIA100MS90 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 80A I(T)RMS, 50000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Ele | |
50RIA100MS90PBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 80A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AC | |
50RIA100S90 | VISHAY |
获取价格 |
Medium Power Thyristors (Stud Version), 50 A | |
50RIA100S90 | INFINEON |
获取价格 |
MEDIUM POWER THYRISTORS | |
50RIA100S90M | VISHAY |
获取价格 |
Medium Power Thyristors (Stud Version), 50 A | |
50RIA100S90M | INFINEON |
获取价格 |
MEDIUM POWER THYRISTORS | |
50RIA100S90PBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 80A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AC | |
50RIA10L | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 78.5A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC | |
50RIA10LPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 78.5A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC |